Nanoscale ferroelectric tunnel junctions based on ultrathin BaTiO 3 film and Ag nanoelectrodes

Applied Physics Letters

Volumn 101, Issue 14, 2012, Pages

  Gao, X S ^a,b   Liu, J M ^b   Au, K ^a   Dai, J Y ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^b SOUTH CHINA NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BATIO; BEAM SOURCES; CONTACT GEOMETRY; FERROELECTRIC POLARIZATION; FERROELECTRIC TUNNEL JUNCTIONS; GROWTH TECHNIQUES; HYSTERESIS CURVE; I - V CURVE; NANO SCALE; NANO-ELECTRODES; NANO-ISLANDS; RESISTIVE SWITCHING BEHAVIORS; TUNNELING BARRIER HEIGHTS; TUNNELING CURRENT; ULTRA-THIN;

BARIUM COMPOUNDS; ELECTRODES; ELECTRON TUNNELING; FERROELECTRIC FILMS; FERROELECTRICITY; GEOMETRY; MOLECULAR BEAM EPITAXY; NANOTECHNOLOGY; TUNNEL JUNCTIONS; ULTRATHIN FILMS;

SILVER;

EID: 84867521165     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4756918     Document Type: Article

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