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Volumn 100, Issue 23, 2012, Pages

Tunnel electroresistance in junctions with ultrathin ferroelectric Pb(Zr 0.2Ti 0.8)O 3 barriers

(8) Pantel, Daniel a Lu, Haidong b Goetze, Silvana a Werner, Peter a Jik Kim, Dong b Gruverman, Alexei b Hesse, Dietrich a Alexe, Marin a

a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

b UNIVERSITY OF NEBRASKA LINCOLN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC TRANSPORT; ELECTRORESISTANCE; FERROELECTRIC POLARIZATION; FERROELECTRIC SWITCHING; FERROELECTRIC TUNNEL JUNCTIONS; PIEZORESPONSE FORCE MICROSCOPY; QUANTUM TUNNELING; QUANTUM-MECHANICAL TUNNELING; RESISTIVE SWITCHING; TRANSPORT MECHANISM; ULTRA-THIN; UNIT CELLS;

ELECTRIC RESISTANCE; FERROELECTRICITY; LEAD; MANGANESE OXIDE; POLARIZATION; QUANTUM THEORY; ZIRCONIUM;

TUNNEL JUNCTIONS;

EID: 84862136909 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4726120 Document Type: Article

Times cited : (106)

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