Transient bicarrier response in high- k dielectrics and its impact on transient charge effects in high- k complementary metal oxide semiconductor devices

Applied Physics Letters

Volumn 88, Issue 16, 2006, Pages

  Kang, C Y ^a   Lee, J C ^a   Choi, R ^b   Song, S C ^b   Young, C D ^b   Bersuker, G ^b   Lee, B H ^b  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DETRAPPING CHARACTERISTICS; HIGH- K DIELECTRICS; TRANSIENT BICARRIER RESPONSE; TRANSIENT CHARGE TRAPPING;

CHARGE CARRIERS; ELECTRIC CHARGE; HOLE TRAPS; MOSFET DEVICES; PERMITTIVITY; SIGNAL PROCESSING;

DIELECTRIC MATERIALS;

EID: 33646205343     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2195901     Document Type: Article

References (10)

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