A conductivity-based selective etching for next generation GaN devices

Physica Status Solidi (B) Basic Research

Volumn 247, Issue 7, 2010, Pages 1713-1716

  Zhang, Yu ^a   Ryu, Sang Wan ^b   Yerino, Chris ^a   Leung, Benjamin ^a   Sun, Qian ^a   Song, Qinghai ^a   Cao, Hui ^a   Han, Jung ^a  

^a Yale University   (United States)

^b Chonnam National University   (South Korea)

Author keywords

Conductivity; Electrochemical etching; III V semiconductors; Microelectromechanical devices

Indexed keywords

EID: 77954587518     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200983650     Document Type: Article

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