P-11: Dc/ac electrical instability of r.f. sputter amorphous in-ga-zn-o tfts

Digest of Technical Papers - SID International Symposium

Volumn 40, Issue 1, 2009, Pages 1117-1120

  Fung, Tze Ching ^a   Abe, Katsumi ^b   Kumomi, Hideya ^b   Kanicki, Jerzy ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b CANON INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SILICA; THRESHOLD VOLTAGE; ZINC COMPOUNDS;

AMORPHOUS IN-GA-ZN-O (A -IGZO) THIN-FILM TRANSISTOR (TFT); BIAS TEMPERATURE STRESS; ELECTRICAL INSTABILITY; PULSE PERIOD; STEADY STATE; STRESS VOLTAGES; STRETCHED EXPONENTIAL MODELS; THRESHOLD VOLTAGE SHIFTS;

THIN FILM TRANSISTORS;

EID: 84929205429     PISSN: 0097966X     EISSN: 21680159     Source Type: Conference Proceeding    
DOI: 10.1889/1.3256481     Document Type: Conference Paper

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