The effect of dynamic bias stress on the photon-enhanced threshold voltage instability of amorphous HfInZnO thin-film transistors

IEEE Electron Device Letters

Volumn 32, Issue 2, 2011, Pages 164-166

  Son, Kyoung Seok ^a   Kim, Hyun Suk ^a   Maeng, Wan Joo ^a   Jung, Ji Sim ^a   Lee, Kwang Hee ^a   Kim, Tae Sang ^a   Park, Joon Seok ^a   Kwon, Jang Yeon ^a   Koo, Bonwon ^a   Lee, Sang Yoon ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Dynamic stress; HfInZnO; instability; thin film transistor (TFT)

Indexed keywords

HAFNIUM COMPOUNDS; INDIUM COMPOUNDS; LIGHT; PLASMA STABILITY; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE; ZINC COMPOUNDS;

DEVICE DEGRADATION; DYNAMIC STRESS; ELECTRICAL STABILITY; HFINZNO; PULSE FREQUENCIES; SWITCHING DEVICES; THIN-FILM TRANSISTOR (TFTS); THRESHOLD-VOLTAGE INSTABILITIES;

THIN FILM TRANSISTORS;

EID: 79151486272     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2093867     Document Type: Article

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