A review and comparison of one-and two-dimensional simulations of solar cells featuring selective emitters

IEEE Journal of Photovoltaics

Volumn 2, Issue 4, 2012, Pages 441-449

  Greulich, Johannes ^a,b   Jäger, Ulrich ^a   Rein, Stefan ^a   Preu, Ralf ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b UNIVERSITY OF FREIBURG   (Germany)

Author keywords

Modeling; selective emitter (SE); simulation; solar cell

Indexed keywords

COMPUTATIONAL EFFORT; EMITTER DOPING; FAST-SIMULATION MODEL; FILL FACTOR; ONE-DIMENSIONAL APPROACH; ONE-DIMENSIONAL MODEL; REALISTIC SIMULATION; SELECTIVE EMITTERS; SIMULATION; TWO DIMENSIONAL MODEL; TWO-DIMENSIONAL SIMULATIONS;

MODELS; OPEN CIRCUIT VOLTAGE; SOLAR CELLS; TWO DIMENSIONAL;

ONE DIMENSIONAL;

EID: 84866742233     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2012.2199083     Document Type: Review

References (47)

1. G. Hahn, "Status of selective emitter technology, " in Proc. 25th Eur. Photovoltaic Solar Energy Conf., Valencia, Spain, 2010, pp. 1091-1096.
2. A. Cuevas and D. A. Russell, "Co-optimization of the emitter region and themetal grid of silicon solar cells, " Prog. Photovoltaic: Res. Appl., vol. 8, pp. 603-616, 2000. (Pubitemid 32135821)
3. D. A. Clugston and P. A. Basore, "PC1D version 5: 32-bit solar cell modeling on personal computers, " in Proc. 26th IEEE Photovoltaic Spec. Conf., Anaheim, CA, 1997, pp. 207-210.
4. N. Stem and M. Cid, "Studies of phosphorous Gaussian profile emitter silicon solar cells, " Mat. Res., vol. 4, no. 2, pp. 143-148, 2001.
5. N. Stem and M. Cid, "Physical limitations for homogeneous and highly doped n-type emitter monocrystalline silicon solar cells, " Solid-State Electron., vol. 48, pp. 198-205, 2004.
6. M. Cid and N. Stem, "Phosphorous emitter and metal-grid optimization for homogeneous (n+ p) and double-diffused (n++ n+ p) emitter silicon solar cells, " Mat. Res., vol. 12, no. 1, pp. 57-62, 2009.
7. J.-S. Park, A. Neugroschel, and F. A. Lindholm, "Systematic analytical solutions for minority-carrier transport in semiconductors with position-dependent composition, with application to heavily doped silicon, " IEEE Trans. Electron. Devices, vol. ED-33, no. 2, pp. 240-249, Feb. 1986. (Pubitemid 16575539)
8. F. J. Bisschop, L. A. Verhoef, and W. C. Sinke, "An analytical solution for the collection efficiency of solar-cell emitters with arbitrary doping profile, " IEEE Trans. Electron. Devices, vol. 37, no. 2, pp. 358-364, Feb. 1990.
9. A. Cuevas, R. Merch́an, and J. C. Ramos, "On the systematic analytical solutions for minority-carrier transport in nonuniform doped semiconductors: Application to solar cells, " IEEE Trans. Electron. Devices, vol. 40, no. 6, pp. 1181-1183, Jun. 1993. (Pubitemid 23686393)
10. Z. Wen, C. Zhou, and W. Wang, "Co-optimization of emitter profile and metal grid of selective emitter silicon solar cells, " Prog. Photovoltaic: Res. Appl., vol. 20, no. 4, pp. 477-485, 2012.
11. U. J̈ager, S. Mack, A. Kimmerle, A. Wolf, and R. Preu, "Influence of doping profile of highly doped regions for selective emitter solar cells, " in Proc. 35th IEEE Photovoltaic Spec. Conf., Honolulu, HI, 2010, pp. 003185-003189.
12. J. Nijs et al., "Recent improvements in the screenprinting technology and comparison with the buried contact technology by 2D-simulation, " Sol. Energ. Mat. Sol. C., vol. 41, no. 42, pp. 101-107, 1996.
13. SENTAURUS TCAD. (2012). [Online]. Available: www. synopsys. com.
14. H. Boubekeur and M. Boumaour, "Impact of lateral junction of selective emitter solar cell performance, " Sol. Energ. Mat. Sol. C., vol. 56, pp. 7-15, 1998. (Pubitemid 128416580)
15. M. Zanuccoli et al., "2-D numerical simulation and modeling ofmonocrystalline selective emitter solar cells, " in Proc. 35th IEEE Photovoltaic Spec. Conf., Honolulu, HI, 2010, pp. 002262-002265.
16. R. De Rose et al., "2-D numerical analysis of the impact of the highly doped profile on selective emitter solar cell performance, " in Proc. 37th IEEE Photovoltaic Spec. Conf., Seattle, WA, 2011, pp. 002556-002559.
17. K. Rapolu, P. Singh, and S. P. Shea, "Two dimensional numerical modeling of a silicon solar cell with deep contacts in the emitter, " in Proc. 34th IEEE Photovoltaic Spec. Conf., Philadelphia, PA, 2009, pp. 001048-001053.
18. K. Rapolu, P. Singh, and S. P. Shea, "Two dimensional numerical modeling of a silicon solar cell with selective emitter configuration, " in Proc. 35th IEEE Photovoltaic Spec. Conf., Honolulu, HI, 2010, pp. 002227-002232.
19. COMSOL Multiphysics. (2012). [Online]. Available: www. comsol. com.
20. C. Reichel, F. Granek, J. Benick, O. S. Wittmann, and S. W. Glunz, "Comparison of emitter saturation current densities determined by injection dependent lifetime spectroscopy in high and low injection regimes, " Prog. Photovoltaics: Res. Appl., vol. 20, no. 1, pp. 21-30, 2010.
21. S. Solmi et al., "Dopant and carrier concentration in silicon in equilibrium with monolithic SiP precipitates, " Phys. Rev. B, vol. 53, no. 12, pp. 7836-7841, 1996.
22. H. M̈ackel and K. Varner, (2012, Feb. ), "On the determination of the emitter saturation current density from lifetime measurements of silicon devices, " Prog. Photovoltaics: Res. Appl., Available: http://dx. doi. org/10. 1002/pip. 2167.
23. P. P. Altermatt et al., "Numerical modeling of highly doped Si:P emitters based on Fermi-Dirac statistics and self-consistent material parameters, " J. Appl. Phys., vol. 92, no. 6, pp. 3187-3197, 2002.
24. U. J̈ager, B. Thaidigsmann, M. Okanovic, and R. Preu, "Quantum efficiency analysis of highly doped areas for selective emitter solar cells, " Energy Procedia, vol. 8, pp. 193-199, 2011.
25. T. Fellmeth, A. Born, A. Kimmerle, F. Clement, D. Biro, and R. Preu, "Recombination at metal-emitter interfaces of front contact technologies for highly efficient silicon solar cells, " Energy Procedia, vol. 8, pp. 115-121, 2011.
26. A. Kimmerle, A. Wolf, U. Belledin, and D. Biro, "Modelling carrier recombination in highly phosphorus-doped industrial emitters, " Energy Procedia, vol. 8, pp. 275-281, 2011.
27. E. Fogarassy, R. Stuck, M. Toulemonde, D. Salles, and P. Siffert, "A model for laser induced diffusion, " J. Appl. Phys., vol. 54, no. 9, pp. 5059-5063, 1983.
28. H. Kodera, "Diffusion coefficients of impurities in silicon melt, " Jpn. J. Appl. Phys., vol. 2, pp. 212-219, 1963.
29. M. Okanovic et al., "Influence of different laser parameters in laser doping from phosphosilicate glass, " in Proc. 24th Eur. Photovoltaic Solar Energy Conf., Hamburg, Germany, 2009, pp. 1771-1774.
30. T. R̈oder et al., "0. 4% absolute efficiency gain of industrial solar cells by laser doped selective emitter, " in Proc. 34th IEEE Photovoltaic Spec. Conf., Philadelphia, PA, 2009, pp. 871-873.
31. D. Nobili, A. Armigliato, M. Finetti, and S. Solmi, "Precipitation as the phenomenon responsible for the electrically inactive phosphorus in silicon, " J. Appl. Phys., vol. 53, no. 3, pp. 1484-1491, 1982. (Pubitemid 12524179)
32. R. F. Wood, "Macroscopic theory of pulsed-laser annealing. III. Nonequilibrium segregation effects, " Phys. Rev. B, vol. 25, no. 4, pp. 2786-2811, 1982.
33. P. P. Altermatt, "Models for numerical device simulations of crystalline silicon solar cells-A review, " J. Comp. Electron., vol. 10, no. 3, pp. 314-330, 2011.
34. D. B. M. Klaassen, "A unified mobility model for device simulation: I. Model equations and concentration dependence, " Solid-State Electron., vol. 35, no. 7, pp. 953-959, 1992. (Pubitemid 23567459)
35. D. B. M. Klaassen, "A unified mobility model for device simulation: II. Temperature dependence of carrier mobility and lifetime, " Solid-State Electron., vol. 35, no. 7, pp. 961-967, 1992. (Pubitemid 23567458)
36. P. P. Altermatt, A. Schenk, F. Geelhaar, and G. Heiser, "Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing, " J. Appl. Phys., vol. 93, no. 3, pp. 1598-1604, 2003.
37. A. Schenk, "Finite erature, full random-phase approximation model of band gap narrowing for silicon device simulation, " J. Appl. Phys., vol. 84, no. 7, pp. 3684-3695, 1998. (Pubitemid 128600505)
38. H. A. MacLeod et al., Thin-Film Optical Filters, 2nd ed. Bristol, U. K. : Adam Hilger, 1986.
39. M. A. Green, "Self-consistent optical parameters of intrinsic silicon at 300K including temperature coefficients, " Sol. Energy Mater. Sol. Cells, vol. 92, no. 11, pp. 1305-1310, 2008.
40. B. T. Phong, "Illumination for computer generated pictures, " Commun. ACM, vol. 18, no. 6, pp. 311-317, 1975.
41. D. K. Schroder, "Solar cell contact resistance-A review, " IEEE Trans. Electron Devices, vol. ED-31, no. 5, pp. 637-647, May 1984.
42. G. Schubert et al., "Thick film metallization of crystalline silicon solar cells, " Ph. D. dissertation, Univ. Konstanz, Konstanz, Germany, 2006, p. 70.
43. S. Kontermann, "Characterization and modeling of contacting crystalline silicon solar cells, " Ph. D. dissertation, Univ., Konstanz, Konstanz, Germany, 2009, p. 18.
44. P. N. Vinod, "SEM and specific contact resistance analysis of screenprinted Ag contacts formed by fire-through process on the shallowemitters of silicon solar cell, " J. Mater. Sci. : Mater. Electron., vol. 20, pp. 1026-1032, 2009.
45. A. Goetzberger,J. Knobloch,B. Voß Crystalline Silicon Solar Cells. . Chichester, U. K. : Wiley, 1998, ch. 6. 2. 2.
46. A. Cuevas and S. Ĺopez-Romero, "The combined effect of non-uniform illumination and series resistance on the open-circuit voltage of solar cells, " Sol. Cells, vol. 11, pp. 163-173, 1984. (Pubitemid 14547541)
47. J. Greulich, M. Glatthaar, and S. Rein, "Fill factor analysis of solar cells' current voltage curves, " Prog. Photovoltaics: Res. Appl., vol. 17, pp. 511-515, 2010.