Phosphorus emitter and metal - Grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cells

Materials Research

Volumn 12, Issue 1, 2009, Pages 57-62

  Sánchez, Manuel Cid ^a   Stem, Nair ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

Efficiency limits; Emitter optimization; Modelling

Indexed keywords

EFFICIENCY; MODELS; SEMICONDUCTOR DOPING; SHEET METAL; SOLAR CELLS;

COLLECTION EFFICIENCY; DOPANT CONCENTRATIONS; EFFICIENCY LIMITS; EMITTER SHEET RESISTANCE; MAXIMUM EFFICIENCY; METAL-SEMICONDUCTOR CONTACTS; RECOMBINATION CURRENTS; SURFACE DOPING;

SILICON SOLAR CELLS;

EID: 68349098714     PISSN: 15161439     EISSN: None     Source Type: Journal    
DOI: 10.1590/S1516-14392009000100006     Document Type: Article

References (14)

1. Park J, Neugroschel A, Lindholm, F. Systematic Analytical Solutions for Minority Carrier Transport in Semiconductors with Position-dependent Composition with Application to Heavily Doped Silicon. IEEE Transaction on Electron Devices. 1986; ED-33(2):240.
2. Bisschop FJ, Verholf LA, Sinke WC. An Analytical Solution for the Collection Efficiency of Solar Cell Emitters with Arbitrary Doping Profile. IEEE Transaction on Electron Devices. 1991; ED-37(2):358.
3. Cuevas A, Basore P, Giroult-Matlakowski G, Dubois C. Surface Recombination Velocity of Highly Doped n-type Silicon. Journal of Applied Physics. 1996; 80(6):3370.
4. Altermatt PP, Schumacher JO, Cuevas A, Kerr M, Glunz SW, King RR, Heiser G, Schenk A. Numerical Modeling of Highly Doped Silicon: P Emitters Based on Fermi-Dirac Statistics and Self Consistent Material Parameters. Journal of Applied Physics. 2002; 92(6):3187.
5. Cuevas A, Russel DA. Co-optimization of the Emitter Region and the Metal-Grid of Silicon Solar Cells. Progress in Photovoltaics: Research and Applications. 2000; 8:603.
6. King RR. Studies of Diffused Phosphorus Emitters: Saturation Current, Surface Recombination Velocity, and Quantum Efficiency. IEEE Transactions on Electron Devices. 1990; ED-37(2):365.
7. Demesmaeker E. Theoretical and Experimental Study of Advanced Concepts for High Efficiency Crystalline Silicon Solar Cells. [S.L.]: Katholieke Universiteit Leuven; 1993. [PhD Thesis].
8. Aberle A, Warta W, Knobloch J, Voß B. 21st IEEE Photovoltaic Specialists Conference; 1990 May 21-25; Kissimmee, FL.
9. Stem N, Cid M. Studies of phosphorus Gaussian profile emitter silicon solar cells. Materials Research. 2001; 4(2):143.
10. Kerr M, Schmidt J, Cuevas A. Surface Recombination Velocity of Phosphorus Diffused Silicon Solar Cell Passivated with Plasma Enhanced Chemical Vapor Deposited on Silicon Nitride and Thermal Silicon Oxide. Journal of Applied Physics. 2001; 89(7): 3821.
11. Green MA. Solar cells - Operating principles, Technology and System Applications. Englewood Cliffs: Prentice Hall Inc.; 1982.
12. Swirhun SE. Characterization of Majority and Minority Carrier Transport in Heavily Doped Silicon. [S.L.]: Stanford University; 1987. [PhD Thesis].
13. Meier DL, Schroder DK. Contact Resistance: its Measurement and Relative Importance to Power Loss in a Solar Cell. IEEE Transaction on Electron Devices. 1984; ED-31 (5): 647.
14. Zhao J, Wang A, Altermatt PP, Wenham SR, Green MA. 24% Efficient PERL Silicon Solar Cell: Recent Improvements in High Efficiency Silicon Solar Cell Research. Solar Energy Materials and Solar Cells. 1996; 41/ 42: 87.