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Volumn 8, Issue , 2011, Pages 193-199

Quantum efficiency analysis of highly doped areas for selective emitter solar cells

Author keywords

Laser processing; Quantum efficiency; Selective emitter

Indexed keywords

CRYSTALLINE MATERIALS; SILICON SOLAR CELLS; SOLAR CELLS;

EID: 80052081376     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.06.123     Document Type: Conference Paper
Times cited : (10)

References (8)
  • 1
    • 80052033976 scopus 로고    scopus 로고
    • Status of selective emitter technology
    • Valencia, Spain
    • Hahn, G. Status of selective emitter technology. in Proceedings of the 25th EU PVSEC. 2010. Valencia, Spain.
    • (2010) Proceedings of the 25th EU PVSEC
    • Hahn, G.1
  • 7
    • 80052096498 scopus 로고    scopus 로고
    • Accurate determination of the IQE of screen printed silicon solar cells by accounting for the finite reflectance of metal contacts
    • Hamburg, Germany
    • Thaidigsmann, B., Wolf, A., and Biro, D. Accurate determination of the IQE of screen printed silicon solar cells by accounting for the finite reflectance of metal contacts. in Proceedings of the 24th European Photovoltaic Solar Energy Conference. 2009. Hamburg, Germany.
    • (2009) Proceedings of the 24th European Photovoltaic Solar Energy Conference
    • Thaidigsmann, B.1    Wolf, A.2    Biro, D.3
  • 8
    • 27944432072 scopus 로고    scopus 로고
    • Loss analysis of crystalline silicon solar cells using photoconductance and quantum efficiency measurements
    • Universität Konstanz: Konstanz
    • Fischer, B., Loss analysis of crystalline silicon solar cells using photoconductance and quantum efficiency measurements, in Fachbereich Physik. 2003, Universität Konstanz: Konstanz. p. 198.
    • (2003) Fachbereich Physik , pp. 198
    • Fischer, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.