Physical limitations for homogeneous and highly doped n-type emitter monocrystalline silicon solar cells

Solid-State Electronics

Volumn 48, Issue 2, 2004, Pages 197-205

  Stem, N ^a   Cid, M ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

Homogeneous n type emitters; Industrial solar cells; Metal silicon contact technique; Screen printing; Series resistance; Shadowing factor

Indexed keywords

CURRENT DENSITY; DOPING (ADDITIVES); OPTIMIZATION; SCREEN PRINTING; SILICON;

SHADOWING FACTOR;

SOLAR CELLS;

EID: 0242335154     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.08.005     Document Type: Article

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