Recombination at metal-emitter interfaces of front contact technologies for highly efficient silicon solar cells

Energy Procedia

Volumn 8, Issue , 2011, Pages 115-121

  Fellmeth, T ^a   Born, A ^a   Kimmerle, A ^a   Clement, F ^a   Biro, D ^a   Preu, R ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Emitter; Metallization; Silicon solar cell

Indexed keywords

DOPING (ADDITIVES); DRIVE-IN FACILITIES; METALLIZING; METALS; OPEN CIRCUIT VOLTAGE; PASSIVATION; SILICON; SOLAR CELLS; THERMOOXIDATION;

CONTACT TECHNOLOGIES; EMITTER; EXPERIMENTAL APPROACHES; FIELD EFFECT PASSIVATION; LOCAL IDEALITY FACTORS; RECOMBINATION MECHANISMS; SATURATION CURRENT DENSITIES; SELECTIVE EMITTERS;

SILICON SOLAR CELLS;

EID: 80052081511     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.06.111     Document Type: Conference Paper

References (9)

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9. T. Fellmeth et al., "20.1% efficient silicon solar cell with aluminum back surface field", 2011, submitted to IEEE Electron Device Letters.