Influence of doping profile of highly doped regions for selective emitter solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 3185-3189

  Jäger, Ulrich ^a   Mack, Sebastian ^a   Kimmerle, Achim ^a   Wolf, Andreas ^a   Preu, Ralf ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CELL LEVELS; DOPING PROFILES; GAUSSIAN DOPING; I-V MEASUREMENTS; LASER DOPING; METAL SEMICONDUCTOR INTERFACE; METALLIZATIONS; NUMERICAL CALCULATION; PULSE ENERGIES; RECOMBINATION CURRENTS; SELECTIVE EMITTERS;

OPEN CIRCUIT VOLTAGE; PHOTOVOLTAIC EFFECTS; SEMICONDUCTOR DIODES; SEMICONDUCTOR LASERS; SOLAR CELLS;

DOPING (ADDITIVES);

EID: 78650140984     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5616866     Document Type: Conference Paper

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