SEM and specific contact resistance analysis of screen-printed Ag contacts formed by fire-through process on the shallow emitters of silicon solar cell

Journal of Materials Science: Materials in Electronics

Volumn 20, Issue 10, 2009, Pages 1026-1032

  Vinod, P N ^a  

^a NAVAL PHYSICAL AND OCEANOGRAPHIC LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AG CONTACTS; AIR AMBIENT; BEST VALUE; CARRIER INJECTION; CONTACT STRUCTURE; ELECTRICAL QUALITY; GLASSY LAYERS; HEAVILY DOPED; IMPURITY DOPING; ITERATION TECHNIQUES; LINEAR RELATIONSHIPS; METAL CONTACTS; METAL PASTE; METALLIZATIONS; NITROGEN AMBIENT; ORDERS OF MAGNITUDE; POWER-LOSSES; SCHOTTKY BARRIER HEIGHTS; SCREEN-PRINTED; SEM; SEMI-CONDUCTOR SURFACES; SI SURFACES; SPECIFIC CONTACT RESISTANCES; THIN LAYERS; TYPICAL VALUES;

CELL MEMBRANES; CONTACT RESISTANCE; ELECTRIC ARCS; FIRE RESISTANCE; METALS; PHOTOVOLTAIC CELLS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SILICON; SILICON NITRIDE; SILICON SOLAR CELLS; SINTERING; SOLAR CELLS; SOLAR ENERGY;

SILVER;

EID: 69249236983     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-008-9815-x     Document Type: Article

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