2-D numerical analysis of the impact of the highly-doped profile on selective emitter solar cell performance

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2011, Pages 002556-002559

  De Rose, R ^a,b   Zanuccoli, M ^a   Magnone, P ^a   Tonini, D ^c   Galiazzo, M ^c   Cellere, G ^c   Frei, M ^d   Guo, H W ^d   Fiegna, C ^a   Sangiorgi, E ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSITY OF CALABRIA   (Italy)

^c Applied Materials Italia Srl   (Italy)

^d APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNMENT TOLERANCE; CELL PERFORMANCE; DOPING PROFILES; METALLIZATION PROCESS; NUMERICAL RESULTS; PROCESS WINDOW; SELECTIVE EMITTERS; SOLAR CELL PERFORMANCE; TWO-DIMENSIONAL (2-D) NUMERICAL SIMULATION;

METALLIZING; NUMERICAL ANALYSIS; PHOTOVOLTAIC EFFECTS;

ALIGNMENT;

EID: 84861047372     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6186469     Document Type: Conference Paper

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