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Volumn 53, Issue 12, 1996, Pages 7836-7841

Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates

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EID: 0001813439     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.53.7836     Document Type: Article
Times cited : (107)

References (23)
  • 20
    • 0002193247 scopus 로고    scopus 로고
    • R. D. Doherty, in Physical Metallurgy, edited by R. W. Cahn and P. Haasen (North-Holland, Amsterdam, 1983), pp. 934-1029.
    • Physical Metallurgy , pp. 934-1029
    • Doherty, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.