Destruction in the active part of an IGBT chip caused by avalanche-breakdown at the edge termination structure

ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems

Volumn , Issue , 2008, Pages 159-162

  Knipper, U ^a   Pfirsch, F ^b   RakerT , ^b   Niedermeyr, J ^b   Wachutk, G ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHES (SNOWSLIDES); ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MICROSYSTEMS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES;

ACTIVE AREAS; ACTIVE PARTS; AVALANCHE BREAKDOWNS; CURRENT FILAMENTATION; CURRENT PEAKS; DESIGN OPTIMIZATIONS; EDGE TERMINATIONS; IGBT CHIPS; MODULATED ELECTRIC FIELDS; OPERATING AREAS; PERIODIC SEQUENCES; SELF-HEATING; SHORT PERIODS; SIMULATIONS AND MEASUREMENTS;

ACTIVE FILTERS;

EID: 62949095009     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASDAM.2008.4743305     Document Type: Conference Paper

References (3)

1. DESSIS TCAD, distributed by Synopsys, Inc.
2. U. Knipper, F. Pfirsch, T. Raker, J. Niedermeyr and G. Wachutka, in Proceedings of the ISPSD'08 Conference, Orlando, USA, p. 307.
3. A. Icaza Deckelmann, G, Wachutka, F, Hirler and J. Krumrey, in Proceedings of the ESSDERC'02 Conference, Bologna, Italy, p. 459.