Power MOSFET RDSon under repetitive avalanche cycling

IEEE International Symposium on Industrial Electronics

Volumn , Issue , 2009, Pages 2016-2019

  Bernoux, Béatrice ^a,b,c   Escoffier, René ^c   Jalbaud, Pierre ^c   Reynès, Jean Michel ^c   Scheid, Emmanuel ^a,b   Dorkel, Jean Marie ^a,b  

^a LAAS CNRS   (France)

^b UNIVERSITÉ PAUL SABATIER   (France)

^c Freescale Semiconducteurs France SAS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING WIRES; ELECTRICAL CHARACTERISTIC; HIGH CURRENTS; HIGH TEMPERATURE; LOW VOLTAGES; METALLIZATIONS; MOS-FET; POWER MOSFET; SIMPLE MODEL;

MOSFET DEVICES;

INDUSTRIAL ELECTRONICS;

EID: 77950173006     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISIE.2009.5215664     Document Type: Conference Paper

References (4)

1. J.B. Sauveplane, P. Tounsi, A. Deram, E. Scheid and X. Chauffleur, "Smart 3-D Finite-Element Modeling for the Design of Ultra-Low On-Resistance MOSFET," IEEE Trans. Adv. Packag., vol.30, 2007.
2. E. Philofsky and E.L. Hall, "A Review of the Limitations of Aluminum Thin Films on Semiconductor Devices," IEEE Trans. Parts. Hybrids, Packag., vol. PHP-11, pp. 281-290, 1975.
3. M. Ciappa, "Selected failure mechanisms of modern power modules," Microeletron. Reliability, vol. 42, 2002.
4. C. Santoro, "Thermal cycling and surface reconstruction in aluminum thin films," J. Electrotherm. Soc. ,1969.