A new edge termination technique for high-voltage devices in 4H-SiCMultiple-floating-zone junction termination extension

IEEE Electron Device Letters

Volumn 32, Issue 7, 2011, Pages 880-882

  Sung, Woongje ^a   Van Brunt, Edward ^a   Baliga, B J ^a   Huang, Alex Q ^a  

^a North Carolina State University   (United States)

Author keywords

4H SiC; Edge termination; junction termination extension (JTE); PiN diode

Indexed keywords

4H-SIC; AS-IMPLANTATION; EDGE TERMINATION; HIGH VOLTAGE DEVICES; JUNCTION TERMINATION EXTENSION (JTE); JUNCTION TERMINATION EXTENSIONS; PARAMETER VARIATION; PIN DIODE; PROCESS LATITUDES; THEORETICAL VALUES;

SEMICONDUCTOR DIODES; SILICON CARBIDE;

ELECTRIC RECTIFIERS;

EID: 79959792148     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2144561     Document Type: Article

References (11)

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