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Advanced RFC technology with new cathode structure of field limiting rings for high voltage planar diode
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K. Nakamura, F. Masuoka, A. Nishii, K. Sadamatsu, S. Kitajima, and K. Hatade, "Advanced RFC technology with new cathode structure of field limiting rings for high voltage planar diode", in Proc. ISPSD, Hiroshima, (Japan), pp. 133-136, June 2010.
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Time-periodic avalanche breakdown at the edge termination of power devices
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U. Knipper, G. Wachutka, F. Pfirsch, T. Raker, and J. Niedemeyr, "Time-periodic avalanche breakdown at the edge termination of power devices", in Proc. ISPSD, Orlando (USA), pp. 307-310, May 2008.
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Analysis of clamped inductive turn-off failure in railway traction IGBT power modules under overload conditions
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Use of accurate chip level modeling and analysis of a power module to establish reliability rules
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R. De Maglie, G. Lourdel, P. Austin, J.-M. Dienot, J.-L. Schanen, and J.-L. Sanchez, "Use of Accurate Chip Level Modeling and Analysis of a Power Module to establish Reliability Rules", in Proc. ISIE, pp. 1571-1576, Montreal (Canada), July 2006.
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Compact modelling and analysis of power-sharing unbalances in IGBT-modules used in traction applications
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A. Castellazzi, M. Ciappa, W. Fichtner, G. Lourdel, and M. Mermet-Guyennet, "Compact modelling and analysis of power-sharing unbalances in IGBT-modules used in traction applications", Microelectron. Reliab., vol. 46, no. 9-11, pp. 1754-1759, September/November 2006.
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10
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Selected failure mechanisms of modern power modules
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M. Ciappa, "Selected failure mechanisms of modern power modules", Microelectron. Reliab., vol. 42, no. 4-5, pp. 653-667, April/May 2002.
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Ciappa, M.1
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Limitation of the short-circuit ruggedness of high-voltage IGBTs
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A. Kopta, M. Rahimo, U. Schlapbach, N. Kaminski, and D. Silber, "Limitation of the short-circuit ruggedness of high-voltage IGBTs", in Proc. ISPSD, Barcelona (Spain), pp. 33-36, June 2009.
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13
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Investigations on the stability of dynamic avalanche in IGBTs
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June
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P. Rose, D. Silber, A. Porst, and F. Pfirsch, "Investigations on the stability of dynamic avalanche in IGBTs", in Proc. ISPSD, Santa Fe (USA), pp. 165-168, June 2002.
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77956566521
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Investigations of inhomogeneous operation of IGBTs under unclamped inductive switching condition
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June
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Y. Mizuno, R. Tagami, and K. Nishiwaki, "Investigations of inhomogeneous operation of IGBTs under unclamped inductive switching condition", in Proc. ISPSD, Hiroshima (Japan), pp. 137-140, June 2010.
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Mizuno, Y.1
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15
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0036045176
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Analytical model for thermal instability of low voltage power MOS and SOA in pulse operation
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June
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P.Spirito, G. Breglio, V. d'Alessandro, and N. Rinaldi, "Analytical model for thermal instability of low voltage power MOS and SOA in pulse operation", in Proc. ISPSD, Santa Fe (USA), pp. 269-272, June 2002.
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0035272707
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Freewheeling diode reverserecovery failure modes in IGBT applications
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March/April
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M. T. Rahimo, and N. Y. A. Shammas "Freewheeling diode reverserecovery failure modes in IGBT applications", IEEE Trans. Ind. Appl., vol.37, no. 2, pp. 661-670, March/April 2001.
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0031148194
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Problems related to the avalanche and secondary breakdown of silicon P-N Junctions
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T. Puritis, "Problems related to the avalanche and secondary breakdown of silicon P-N Junctions", Microelectron. Reliab., vol. 35, no. 5, pp. 713-719, May 1997.
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