Time-periodic avalanche breakdown at the edge termination of power devices

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2008, Pages 307-310

  Knipper, U ^a   Wachutka, G ^a   Pfirsch, F ^b   Raker, T ^b   Niedermeyr, J ^b  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHES (SNOWSLIDES); ELECTRIC CONDUCTIVITY; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SNOW;

EDGE TERMINATION; INTERNATIONAL SYMPOSIUM; POWER SEMICONDUCTOR DEVICES;

SEMICONDUCTOR DEVICES;

EID: 51549106889     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2008.4538960     Document Type: Conference Paper

References (7)

1. A. Icaza, G. Wachutka, F. Hirler, J. Krumrey, and R. Henninger, "Failure of multiple-cell power DMOS transistors in avalanche operation", Proc. of ESSDERC 2003, Estoril, Portugal, pp. 323-326.
2. V. Temple, "Junction termination extension (JTE), a new technique for increasing avalanche breakdown voltage and controlling surface electric fields in p-n junctions", IEEE Trans. on Electron Devices, vol. 30, no. 8, pp. 954-957, 1983.
3. DESSIS TCAD, distributed by Synopsys, Inc.
4. U. Knipper, F. Pfirsch, T. Raker, J. Niedermeyr, and G. Wachutka, "Study of time-periodic avalanche breakdown occuring in VLD edge termination structures", Proc. of Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria, pp. 189-192, 2007.
5. M. Shur, T. A. Fjeldly, H. Iwai, and J. Zolper, "Breakdown phenomena in semiconductors and semiconductor devices", International Journal of High Speed Electronics and Systems, vol. 14, no. 4, p. 40, 2004.
6. S. Huang, K. Sheng, G. A. J. Amaratunga, F. Udrea, and P. Waind, "An experimental and numerical investigation of IGBT blocking characteristics" , Proc. of the International Power Electronics and Motion Control Conference (IPEMC), vol. 1, pp. 407-411, 2000.
7. S. Clemente, "Transient thermal response of power semiconductors to short power pulses", IEEE Trans. on Power Electronics, vol. 8, no. 4, pp. 337-341, 1993.