The impact of repetitive unclamped inductive switching on the electrical parameters of low-voltage trench power nMOSFETs

IEEE Transactions on Electron Devices

Volumn 57, Issue 7, 2010, Pages 1651-1658

  Alatise, Olayiwola ^a   Kennedy, Ian ^a   Petkos, George ^a   Heppenstall, Keith ^a   Khan, Khalid ^a   Parkin, Jim ^a   Koh, Adrian ^a   Rutter, Philip ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Avalanche current; avalanche duration; power metal oxide semiconductor field effect transistor (MOSFET); unclamped inductive switching (UIS)

Indexed keywords

AVALANCHE CURRENTS; BASE TEMPERATURE; BREAKDOWN VOLTAGE; DEGRADATION MECHANISM; DELTA-V; ELECTRICAL PARAMETER; ELECTRICAL PERFORMANCE; EXPERIMENTAL DATA; HOLE INJECTION; HOT CARRIER INJECTION; INTERFACE TRAP GENERATION; LINEAR RELATIONSHIPS; LOW-VOLTAGE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOS-FET; MOSFETS; NMOSFETS; ON-STATE RESISTANCE; PER UNIT; POWER-LAW; POWER-LAW RELATIONSHIP; PREFACTORS; SUBTHRESHOLD SLOPE; UNCLAMPED INDUCTIVE SWITCHING;

DEGRADATION; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRON INJECTION; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); HETEROJUNCTION BIPOLAR TRANSISTORS; HOLE TRAPS; IMPACT IONIZATION; SLOPE STABILITY; SWITCHING; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 77954027562     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2049062     Document Type: Article

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