The impact of carbon concentration on the crystalline phase and dielectric constant of atomic layer deposited HfO2 films on Ge substrate

ECS Journal of Solid State Science and Technology

Volumn 1, Issue 2, 2012, Pages

  Jung, Hyung Suk ^a   Jeon, Sang Ho ^a   Kim, Hyo Kyeom ^a   Yu, Il Hyuk ^a   Lee, Sang Young ^a   Lee, Joohwi ^a   Chung, Yoon Jang ^a   Cho, Deok Yong ^a   Lee, Nae In ^b   Park, Tae Joo ^c   Choi, Jung Hae ^d   Han, Seungwu ^a   Hwang, Cheol Seong ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Hanyang University   (South Korea)

^d Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84866725508     PISSN: 21628769     EISSN: 21628777     Source Type: Journal    
DOI: 10.1149/2.020202jss     Document Type: Article

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