Nondestructive investigation of interface states in high-k oxide films on Ge substrate using X-ray absorption spectroscopy

Physica Status Solidi - Rapid Research Letters

Volumn 6, Issue 4, 2012, Pages 181-183

  Cho, Deok Yong ^a   Jung, Hyung Suk ^b   Yu, Il Hyuk ^b   Park, Won Goo ^c   Cho, Suyeon ^c   Kim, Useong ^c   Oh, Se Jung ^c   Park, Byeong Gyu ^d   Chang, Fan Hsiu ^e   Lin, Hong Ji ^e   Hwang, Cheol Seong ^b  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b Seoul National University   (South Korea)

^c Seoul National University   (South Korea)

^d Pohang University of Science and Technology (POSTECH)   (South Korea)

^e NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

Germanium; High k dielectrics; Oxides; X ray absorption spectroscopy

Indexed keywords

COMPARATIVE STUDIES; GATE OXIDE; GE SUBSTRATES; HIGH PERMITTIVITY; HIGH-K DIELECTRICS; HIGH-K OXIDES; NON DESTRUCTIVE; O K-EDGES; SI SUBSTRATES;

ELECTRONIC STRUCTURE; GERMANIUM; GERMANIUM OXIDES; HAFNIUM OXIDES; INTERFACE STATES; OXIDE FILMS; OXIDES; SILICON COMPOUNDS; SUBSTRATES; X RAY ABSORPTION SPECTROSCOPY; ZIRCONIUM ALLOYS;

INTERFACES (MATERIALS);

EID: 84859326154     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201206059     Document Type: Article

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