Degradation of interface integrity between a high-k dielectric thin film and a gate electrode due to excess oxygen in the film

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 376-381

  Miura, Hideo ^a   Suzuki, Ken ^a   Ito, Yuta ^a   Samukawa, Seiji ^a   Kubota, Tomonori ^a   Ikoma, Toru ^a   Yoshikawa, Hideki ^b   Ueda, Shigenori ^b   Yamashita, Yoshiyuki ^b   Kobayashi, Keisuke ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Band gap; Hafnium oxide; High k gate dielectrics; Point defects; Quantum chemical molecular dynamics; Residual stress; Synchrotron radiation photoemission spectroscopy

Indexed keywords

BAND GAP; CARBON ATOMS; DEGRADATION MECHANISM; DEPOSITED METAL; EXCESS OXYGEN; GATE ELECTRODES; GOLD THIN FILMS; HAFNIUM DIOXIDE; HAFNIUM DIOXIDE FILM; HAFNIUM OXIDE; HAFNIUM OXIDE FILMS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; HIGH-K GATE DIELECTRICS; INTERFACE INTEGRITY; INTERFACE STRUCTURES; INTERFACIAL LAYER; INTERSTITIAL OXYGEN; INTERSTITIALS; QUANTUM CHEMICAL MOLECULAR DYNAMICS; SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY;

CARBON FILMS; DEFECTS; DEGRADATION; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; DYNAMICS; EMISSION SPECTROSCOPY; ENERGY GAP; GATES (TRANSISTOR); GOLD DEPOSITS; HAFNIUM; HAFNIUM COMPOUNDS; LUMINESCENCE OF ORGANIC SOLIDS; METAL RECOVERY; MOLECULAR DYNAMICS; MOS CAPACITORS; OXIDE FILMS; OXIDES; OXYGEN; OXYGEN VACANCIES; PHOTOEMISSION; POINT DEFECTS; REFRACTORY METAL COMPOUNDS; RESIDUAL STRESSES; SYNCHROTRON RADIATION; SYNCHROTRONS; THIN FILM DEVICES; THIN FILMS; TUNGSTEN; TUNGSTEN CARBIDE; WEAR RESISTANCE;

GATE DIELECTRICS;

EID: 70449094702     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173282     Document Type: Conference Paper

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