The relevance of deeply-scaled FET threshold voltage shifts for operation lifetimes

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2012, Pages

  Kaczer, B ^a   Franco, J ^a,b   Toledano Luque, M ^a   Roussel, Ph J ^a   Bukhori, M F ^c   Asenov, A ^d,e   Schwarz, B ^f   Bina, M ^f   Grasser, T ^f   Groeseneken, G ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSITI KEBANGSAAN MALAYSIA   (Malaysia)

^d UNIVERSITY OF GLASGOW   (United Kingdom)

^e Gold Standard Simulations ^*  (United Kingdom)

^f VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

circuit simulations; lifetime projections; single carrier effects; Time dependent variability

Indexed keywords

3-D NUMERICAL SIMULATION; CHANNEL DOPINGS; GATE BIAS; GATE BIAS RANGE; GATE-OXIDE DEFECTS; HIGH GATE BIAS; LIFETIME PROJECTIONS; SINGLE CARRIER; THRESHOLD VOLTAGE SHIFTS; TIME-DEPENDENT;

CIRCUIT SIMULATION; HIGH ELECTRON MOBILITY TRANSISTORS;

THRESHOLD VOLTAGE;

EID: 84866598122     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2012.6241839     Document Type: Conference Paper

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