Time-dependent variability of high-k based MOS devices: Nanoscale characterization and inclusion in circuit simulators

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Nafria, M ^a   Rodriguez, R ^a   Porti, M ^a   Martin Martinez, J ^a   Lanza, M ^a   Aymerich, X ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AGING MECHANISM; ATOMIC SCALE PROCESS; CIRCUIT OPERATION; CIRCUIT PERFORMANCE; CIRCUIT SIMULATORS; NANO SCALE; NANOSCALE CHARACTERIZATION; RELIABILITY AWARE DESIGN; TIME-DEPENDENT;

ELECTRON DEVICES; GATE DIELECTRICS; NANOTECHNOLOGY;

EQUIPMENT;

EID: 84856995578     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131500     Document Type: Conference Paper

References (30)

1. A. Papanikolau et al., Proc. VLSI-SoC (2006).
2. M. Alam, Micr. Reliab.,Vol. 48, pp. 1114-1122 (2008).
3. G.Groeseneken, R. Degraeve, B. Kackzer, P. Rousell, Proc. IPFA (2007)
4. B. Dierickx et al., Proc. IWPSD (2007).
5. K. Takeuchi, A. Nishida and T. Hiramoto, Proc. SISPAD (2009).
6. A. Asenov, S. Kaya, A.R. Brown, IEEE Trans. Elec. Dev., Vol. 50 (5), pp.1254-1260 (2003).
7. A. Asenov et al., IEDM Tech. Dig. (2008);
8. A.Olbrich, B.Ebersberger, C.Boit, Appl.Phys.Lett., 73(21), p.3114 (1998).
9. M. Porti, M. Nafria, X. Aymerich, A. Olbrich, B. Ebersberger, J. Appl. Phys., 91(4), pp. 2071-2079 (2002).
10. V. Yanev et al., Appl. Phys. Lett., 92, paper 252910 (2008).
11. V. Iglesias et al., Appl. Phys. Lett., 97, p. 262906 (2010).
12. A.Bayerl et al.,IEEE Trans. Dev. Mat. Reliab.,Vol.11, p. 495-501 (2011)
13. V. Iglesias et al., Appl,Phys. Lett., 99, 103510 (2011).
14. M. Alam and S. Mahapatra, Micr. Reliab., Vol. 45(1), p.71-81 (2005).
15. B. Kaczer et al., Proc. IRPS, pp. 26-32 (2010).
16. J. Martin-Martinez et al., Proc. IRPS, pp. 920-925 (2011).
17. C. Hu et al., IEEE Trans. Elec. Dev., Vol. 32(2), pp. 375-385 (1985).
18. E. Amat et al., Proc. IRPS, pp. 1028-1032 (2009).
19. R. Degraeve et al., IEEE Trans. Elec. Dev., Vol. 45, p. 904-911 (1998).
20. J. Sune E. Miranda, M. Nafria, X. Aymerich, Appl. Phys. Lett., 75(7), pp. 959-961, (1999).
21. H. Wang, M. Miranda, F. Catthoor, W. Dehaene, Proc. MTDT (2006).
22. V. Ramadurai, N. Rohrer, C. Gonzalez, Proc. IRPS, pp. 270-273 (2006).
23. B. Vaidyanathan, S. Bai, A. Oates, Proc. IRPS, p. 706-709 (2011).
24. J. Martin-Martinez, R. Rodriguez, M. Nafria and X. Aymerich, IEEE Trans. Dev. Mat. Reliab., Vol. 9(2), pp. 305-310 (2009).
25. E. Maricau and G. Gielen, IEEE Trans. Emerg. Sel. Topics in Circ. and Syst., Vol. 1(1), pp. 50-58 (2011).
26. R. Fernandez, J. Martin-Martinez, R. Rodriguez, M. Nafria, X. Aymerich, IEEE Trans. Elec. Dev., 55, pp.997-1004 (2008).
27. G. Sasse, M. Acar, F. Kuper and J. Schmitz, Micr. Reliab., Vol. 48, pp. 1581-1585 (2008)
28. N. Ayala et al., Micr. Eng., Vol. 88(7), p. 1384-1387, (2011).
29. J. Martin-Martinez et al., Proc. ESSDERC, pp. 55-58 (2008).
30. J. Martin-Martinez et al., IEEE Trans. Dev. Mat. Reliab., in press.