Scaling of micro-fabricated nanometer-sized Schottky diodes

Microelectronic Engineering

Volumn 64, Issue 1-4, 2002, Pages 429-433

  Smit, G D J ^a   Flokstra, M G ^a   Rogge, S ^a   Klapwijk, T M ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Electrical transport; Interconnect; Nanometer scale; Schottky diode

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; ELECTROSTATICS; LITHOGRAPHY; MICROELECTRONIC PROCESSING; NANOSTRUCTURED MATERIALS;

TUNNELLING CURRENTS;

SCHOTTKY BARRIER DIODES;

EID: 0036776687     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00817-1     Document Type: Article

References (9)

1. Properties of nanometer-sized metal-semiconductor interfaces of GaAs and InP formed by an in-situ electrochemical process
2. Scanning tunneling microscope tip-sample interactions: Atomic modification of Si and nanometer Si Schottky diodes
3. Functional nanoscale electronic devices assembled using silicon nanowire building blocks
4. Enhanced tunneling in nanometer-sized metal-semiconductor interfaces
5. 2 films
6. Microscopy and spectroscopy of buried nanostructures
7. 2/Si interface