Au/Ge-based Ohmic contact to an AlGaAs/InGaAs pseudomorphic high electron mobility transistor with an undoped cap layer

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 3, 1999, Pages 1034-1039

  Lee, Jong Lam ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 24644511226     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590689     Document Type: Article

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