Particle-assisted Ga xIn 1-xP nanowire growth for designed bandgap structures

Nanotechnology

Volumn 23, Issue 24, 2012, Pages

  Jacobsson, D ^a   Persson, J M ^b   Kriegner, D ^c   Etzelstorfer, T ^c   Wallentin, J ^a   Wagner, J B ^b   Stangl, J ^c   Samuelson, L ^a   Deppert, K ^a   Borgstrom M T ^a  

^a LUND UNIVERSITY   (Sweden)

^b TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^c JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-GAP STRUCTURES; COMPOSITIONAL RANGE; EDGE EFFECT; ENERGY RANGES; HIGH RESOLUTION X RAY DIFFRACTION; HYDROGEN CHLORIDE; MATERIAL COMPOSITIONS; NANOWIRE GROWTH; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SINGLE NANOWIRES; TRIMETHYL GALLIUM; TRIMETHYLINDIUM; X-RAY ENERGY DISPERSIVE SPECTROSCOPY;

CHLORINE COMPOUNDS; ENERGY DISPERSIVE SPECTROSCOPY; ENERGY GAP; METALLORGANIC VAPOR PHASE EPITAXY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

NANOWIRES;

EID: 84861610127     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/24/245601     Document Type: Article

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