-
1
-
-
79959907003
-
Approaches for high internal quantum efficiency green InGan light-emitting diodes with large overlap quantum wells
-
H. P. Zhao, G. Y. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGan light-emitting diodes with large overlap quantum wells,” Opt. Express 19(S4 Suppl 4), A991-A1007 (2011).
-
(2011)
Opt. Express
, vol.19
, Issue.S4
, pp. A991-A1007
-
-
Zhao, H.P.1
Liu, G.Y.2
Zhang, J.3
Poplawsky, J.D.4
Dierolf, V.5
Tansu, N.6
-
2
-
-
0035874864
-
High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy
-
K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys. 40(Part 2, 6B), L583-L585 (2001).
-
(2001)
Jpn. J. Appl. Phys.
, vol.40
, Issue.6
, pp. L583-L585
-
-
Tadatomo, K.1
Okagawa, H.2
Ohuchi, Y.3
Tsunekawa, T.4
Imada, Y.5
Kato, M.6
Taguchi, T.7
-
3
-
-
32444442155
-
Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution
-
A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
-
(2006)
Appl. Phys. Lett.
, vol.88
, Issue.6
, pp. 61124
-
-
David, A.1
Fujii, T.2
Sharma, R.3
Mc Groddy, K.4
Nakamura, S.5
Denbaars, S.P.6
Hu, E.L.7
Weisbuch, C.8
Benisty, H.9
-
4
-
-
33748937719
-
Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes
-
H. K. Cho, J. Jang, J. H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K. D. Lee, S. H. Kim, K. Lee, S. K. Kim, and Y. H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express 14(19), 8654-8660 (2006).
-
(2006)
Opt. Express
, vol.14
, Issue.19
, pp. 8654-8660
-
-
Cho, H.K.1
Jang, J.2
Choi, J.H.3
Choi, J.4
Kim, J.5
Lee, J.S.6
Lee, B.7
Choe, Y.H.8
Lee, K.D.9
Kim, S.H.10
Lee, K.11
Kim, S.K.12
Lee, Y.H.13
-
5
-
-
34547265656
-
Effect of periodic deflector embedded in InGaN/GaN light emitting diode
-
H. G. Kim, M. G. Na, H. K. Kim, H. Y. Kim, J. H. Ryu, T. V. Cuong, and C.-H. Hong, “Effect of periodic deflector embedded in InGaN/GaN light emitting diode,” Appl. Phys. Lett. 90(26), 261-117 (2007).
-
(2007)
Appl. Phys. Lett
, vol.90
, Issue.26
, pp. 117-261
-
-
Kim, H.G.1
Na, M.G.2
Kim, H.K.3
Kim, H.Y.4
Ryu, J.H.5
Cuong, T.V.6
Hong, C.-H.7
-
6
-
-
56849117069
-
Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces
-
C. C. Yang, C. F. Lin, C. M. Lin, C. C. Chang, K. T. Chen, J. F. Chien, and C. Y. Chang, “Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces,” Appl. Phys. Lett. 93(20), 203-103 (2008).
-
(2008)
Appl. Phys. Lett
, vol.93
, Issue.20
, pp. 103-203
-
-
Yang, C.C.1
Lin, C.F.2
Lin, C.M.3
Chang, C.C.4
Chen, K.T.5
Chien, J.F.6
Chang, C.Y.7
-
7
-
-
51349137873
-
Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDs
-
C. B. Soh, B. Wang, S. J. Chua, V. K. Lin, R. J. Tan, and S. Tripathy, “Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDs,” Nanotechnology 19(40), 405-303 (2008).
-
(2008)
Nanotechnology
, vol.19
, Issue.40
, pp. 303-405
-
-
Soh, C.B.1
Wang, B.2
Chua, S.J.3
Lin, V.K.4
Tan, R.J.5
Tripathy, S.6
-
8
-
-
68349139537
-
Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures
-
Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures,” Opt. Express 17(16), 13747-13757 (2009).
-
(2009)
Opt. Express
, vol.17
, Issue.16
, pp. 13747-13757
-
-
Ee, Y.K.1
Kumnorkaew, P.2
Arif, R.A.3
Tong, H.4
Gilchrist, J.F.5
Tansu, N.6
-
9
-
-
68249127583
-
High efficiency light emitting diode with anisotropically etched GaN-sapphire interface
-
M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett. 95(4), 041109 (2009).
-
(2009)
Appl. Phys. Lett.
, vol.95
, Issue.4
, pp. 41109
-
-
Lo, M.H.1
Tu, P.M.2
Wang, C.H.3
Hung, C.W.4
Hsu, S.C.5
Cheng, Y.J.6
Kuo, H.C.7
Zan, H.W.8
Wang, S.C.9
Chang, C.Y.10
Huang, S.C.11
-
10
-
-
79953217074
-
Light extraction efficiency enhancement of GaN blue LED with ZnO nanotips prepared by aqueous solution deposition
-
M. K. Lee, C. L. Ho, C. C. Lin, N. R. Cheng, M. H. Houng, Y. K. Chien, and C. F. Yen, “Light extraction efficiency enhancement of GaN blue LED with ZnO nanotips prepared by aqueous solution deposition,” J. Electrochem. Soc. 158(5), D286-D289 (2011).
-
(2011)
J. Electrochem. Soc.
, vol.158
, Issue.5
, pp. D286-D289
-
-
Lee, M.K.1
Ho, C.L.2
Lin, C.C.3
Cheng, N.R.4
Houng, M.H.5
Chien, Y.K.6
Yen, C.F.7
-
11
-
-
84860349234
-
Double embedded photonic crystals for extraction of guided light in light-emitting diodes
-
J. Jewell, D. Simeonov, S. C. Huang, Y. L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett. 100(17), 171-105 (2012).
-
(2012)
Appl. Phys. Lett
, vol.100
, Issue.17
, pp. 105-171
-
-
Jewell, J.1
Simeonov, D.2
Huang, S.C.3
Hu, Y.L.4
Nakamura, S.5
Speck, J.6
Weisbuch, C.7
-
12
-
-
79958038567
-
Light extraction efficiency and radiation patterns of Ill-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios
-
X. H. Li, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of Ill-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photonics J. 3(3), 489-499 (2011).
-
(2011)
IEEE Photonics J
, vol.3
, Issue.3
, pp. 489-499
-
-
Li, X.H.1
Song, R.2
Ee, Y.-K.3
Kumnorkaew, P.4
Gilchrist, J.F.5
Tansu, N.6
-
13
-
-
70349303315
-
Optimization of light extraction efficiency of Ill-nitride LEDs with self-assembled colloidal-based microlenses
-
Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, H. Zhao, J. F. Gilchrist, and N. Tansu, “Optimization of light extraction efficiency of Ill-nitride LEDs with self-assembled colloidal-based microlenses,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1218-1225 (2009).
-
(2009)
IEEE J. Sel. Top. Quantum Electron.
, vol.15
, Issue.4
, pp. 1218-1225
-
-
Ee, Y.K.1
Kumnorkaew, P.2
Arif, R.A.3
Tong, H.4
Zhao, H.5
Gilchrist, J.F.6
Tansu, N.7
-
14
-
-
36549056017
-
Nhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays
-
2/polystyrene microlens arrays,” Appl. Phys. Lett. 91(22), 221-107 (2007).
-
(2007)
Appl. Phys. Lett
, vol.91
, Issue.22
, pp. 107-221
-
-
Ee, Y.K.1
Arif, R.A.2
Tansu, N.3
Kumnorkaew, P.4
Gilchrist, J.F.5
-
15
-
-
79951878137
-
Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN
-
S. Chhajed, W. Lee, J. Cho, E. F. Schubert, and J. K. Kim, “Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN,” Appl. Phys. Lett. 98(7), 071102 (2011).
-
(2011)
Appl. Phys. Lett
, vol.98
, Issue.7
, pp. 71102
-
-
Chhajed, S.1
Lee, W.2
Cho, J.3
Schubert, E.F.4
Kim, J.K.5
-
16
-
-
77949633868
-
Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire
-
Y. K. Ee, X. H. Li, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire,” J. Cryst. Growth 312(8), 1311-1315 (2010).
-
(2010)
J. Cryst. Growth
, vol.312
, Issue.8
, pp. 1311-1315
-
-
Ee, Y.K.1
Li, X.H.2
Biser, J.3
Cao, W.4
Chan, H.M.5
Vinci, R.P.6
Tansu, N.7
-
17
-
-
79954601399
-
Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned Sapphire
-
Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned Sapphire,” Appl. Phys. Lett. 98(15), 151-102 (2011).
-
(2011)
Appl. Phys. Lett.
, vol.98
, Issue.15
, pp. 102-151
-
-
Li, Y.1
You, S.2
Zhu, M.3
Zhao, L.4
Hou, W.5
Detchprohm, T.6
Taniguchi, Y.7
Tamura, N.8
Tanaka, S.9
Wetzel, C.10
-
18
-
-
84861140849
-
Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography
-
K. J. Byeon, J. Y. Cho, J. Kim, H. Park, and H. Lee, “Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography,” Opt. Express 20(10), 11423-11432 (2012).
-
(2012)
Opt. Express
, vol.20
, Issue.10
, pp. 11423-11432
-
-
Byeon, K.J.1
Cho, J.Y.2
Kim, J.3
Park, H.4
Lee, H.5
-
19
-
-
84857298604
-
Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes
-
J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys. 110(11), 113-110 (2011).
-
(2011)
J. Appl. Phys.
, vol.110
, Issue.11
, pp. 110-113
-
-
Zhang, J.1
Tansu, N.2
-
20
-
-
84863229752
-
Photoluminescence studies of polarization effects in InGaN/(In)GaN multiple quantum well structures
-
L. Zhang, K. Cheng, H. Liang, R. Lieten, M. Leys, and G. Borghs, “Photoluminescence studies of polarization effects in InGaN/(In)GaN multiple quantum well structures,” Jpn. J. Appl. Phys. 51, 030207 (2012).
-
(2012)
Jpn. J. Appl. Phys.
, vol.51
, pp. 30207
-
-
Zhang, L.1
Cheng, K.2
Liang, H.3
Lieten, R.4
Leys, M.5
Borghs, G.6
-
21
-
-
80052132887
-
Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes
-
H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett. 98(15), 151-115 (2011).
-
(2011)
Appl. Phys. Lett.
, vol.98
, Issue.15
, pp. 115-151
-
-
Zhao, H.1
Zhang, J.2
Liu, G.3
Tansu, N.4
-
22
-
-
83655202909
-
Enhancement of green emission from InGaN/GaN multiple quantum wells via coupling to surface plasmons in a two-dimensional silver array
-
C. H. Lu, C. C. Lan, Y. L. Lai, Y. L. Li, and C. P. Liu, “Enhancement of green emission from InGaN/GaN multiple quantum wells via coupling to surface plasmons in a two-dimensional silver array,” Adv. Funct. Mater. 21(24), 4719-4723 (2011).
-
(2011)
Adv. Funct. Mater
, vol.21
, Issue.24
, pp. 4719-4723
-
-
Lu, C.H.1
Lan, C.C.2
Lai, Y.L.3
Li, Y.L.4
Liu, C.P.5
-
23
-
-
77953587417
-
Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer
-
S. Choi, H. J. Kim, S. S. Kim, J. Liu, J. Kim, J. H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett. 96(22), 221-105 (2010).
-
(2010)
Appl. Phys. Lett.
, vol.96
, Issue.22
, pp. 105-221
-
-
Choi, S.1
Kim, H.J.2
Kim, S.S.3
Liu, J.4
Kim, J.5
Ryou, J.H.6
Dupuis, R.D.7
Fischer, A.M.8
Ponce, F.A.9
-
24
-
-
77955415098
-
Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes
-
H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron. 54(10), 1119-1124 (2010).
-
(2010)
Solid-State Electron
, vol.54
, Issue.10
, pp. 1119-1124
-
-
Zhao, H.1
Liu, G.2
Arif, R.A.3
Tansu, N.4
-
25
-
-
66149094221
-
Efficiency enhancement of GaAs photovoltaics employing indium-tin-oxide nano-columns
-
P. Yu, C. H. Chang, C. H. Chiu, C. S. Yang, J. C. Yu, H. C. Kuo, S. H. Hsu, and Y. C. Chang, “Efficiency enhancement of GaAs photovoltaics employing indium-tin-oxide nano-columns,” Adv. Mater. (Deerfield Beach Fla.) 21(16), 1618-1621 (2009).
-
(2009)
Adv. Mater. (Deerfield Beach Fla.)
, vol.21
, Issue.16
, pp. 1618-1621
-
-
Yu, P.1
Chang, C.H.2
Chiu, C.H.3
Yang, C.S.4
Yu, J.C.5
Kuo, H.C.6
Hsu, S.H.7
Chang, Y.C.8
-
26
-
-
70749151144
-
Oblique electron-beam evaporation of distinctive indium-tin-oxide nanorods for enhanced light extraction from InGaN/GaN light emitting diodes
-
C. H. Chiu, P. Yu, C. H. Chang, C. S. Yang, M. H. Hsu, H. C. Kuo, and M. A. Tsai, “Oblique electron-beam evaporation of distinctive indium-tin-oxide nanorods for enhanced light extraction from InGaN/GaN light emitting diodes,” Opt. Express 17(23), 21250-21256 (2009).
-
(2009)
Opt. Express
, vol.17
, Issue.23
, pp. 21250-21256
-
-
Chiu, C.H.1
Yu, P.2
Chang, C.H.3
Yang, C.S.4
Hsu, M.H.5
Kuo, H.C.6
Tsai, M.A.7
-
27
-
-
79951596582
-
Comparison of various surface textured layer in InGaN LEDs for high light extraction efficiency
-
J. H. Kang, J. H. Ryu, H. K. Kim, H. Y. Kim, N. Han, Y. J. Park, P. Uthirakumar, and C.-H. Hong, “Comparison of various surface textured layer in InGaN LEDs for high light extraction efficiency,” Opt. Express 19(4), 3637-3647 (2011).
-
(2011)
Opt. Express
, vol.19
, Issue.4
, pp. 3637-3647
-
-
Kang, J.H.1
Ryu, J.H.2
Kim, H.K.3
Kim, H.Y.4
Han, N.5
Park, Y.J.6
Uthirakumar, P.7
Hong, C.-H.8
-
28
-
-
78751485029
-
Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands
-
T. B. Wei, Q. F. Kong, J. X. Wang, J. Li, Y. P. Zeng, G. H. Wang, J. M. Li, Y. X. Liao, and F. T. Yi, “Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands,” Opt. Express 19(2), 1065-1071 (2011).
-
(2011)
Opt. Express
, vol.19
, Issue.2
, pp. 1065-1071
-
-
Wei, T.B.1
Kong, Q.F.2
Wang, J.X.3
Li, J.4
Zeng, Y.P.5
Wang, G.H.6
Li, J.M.7
Liao, Y.X.8
Yi, F.T.9
-
29
-
-
40549109930
-
Leakage current origins and passivation effect of GaN-based light emitting diodes fabricated with Ag p-contacts
-
H. Kim, J. Cho, Y. Park, and T. Y. Seong, “Leakage current origins and passivation effect of GaN-based light emitting diodes fabricated with Ag p-contacts,” Appl. Phys. Lett. 92(9), 092115 (2008).
-
(2008)
Appl. Phys. Lett
, vol.92
, pp. 92115
-
-
Kim, H.1
Cho, J.2
Park, Y.3
Seong, T.Y.4
-
30
-
-
79251515477
-
Rapid direct growth of Li-Al layered double hydroxide (LDH) film on glass, silicon wafer and carbon cloth and characterization of LDH film on substrates
-
Z. L. Hsieh, M. C. Lin, and J. Y. Uan, “Rapid direct growth of Li-Al layered double hydroxide (LDH) film on glass, silicon wafer and carbon cloth and characterization of LDH film on substrates,” J. Mater. Chem. 21(6), 1880 (2011).
-
(2011)
J. Mater. Chem.
, vol.21
, Issue.6
, pp. 1880
-
-
Hsieh, Z.L.1
Lin, M.C.2
Uan, J.Y.3
-
31
-
-
33645528374
-
Photonic crystal laser lift-off GaN light-emitting diodes
-
A. David, T. Fujii, B. Moran, S. Nakamura, S. P. DenBaars, C. Weisbuch, and H. Benisty, “Photonic crystal laser lift-off GaN light-emitting diodes,” Appl. Phys. Lett. 88(13), 133-514 (2006)
-
(2006)
Appl. Phys. Lett.
, vol.88
, Issue.13
, pp. 133-514
-
-
David, A.1
Fujii, T.2
Moran, B.3
Nakamura, S.4
Denbaars, S.P.5
Weisbuch, C.6
Benisty, H.7
|