Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands

Optics Express

Volumn 19, Issue 2, 2011, Pages 1065-1071

  Wei, Tongbo ^a   Kong, Qingfeng ^a   Wang, Junxi ^a   Li, Jing ^a   Zeng, Yiping ^a   Wang, Guohong ^a   Li, Jinmin ^a   Liao, Yuanxun ^b   Yi, Futing ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF HIGH ENERGY PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CESIUM ALLOYS; ELECTROLUMINESCENCE; ELECTROMAGNETIC INDUCTION; GALLIUM ALLOYS; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; LIGHT; LIGHT EMISSION;

ELECTROLUMINESCENCE SPECTRUM; ENHANCEMENT FACTOR; ETCH MASK; LIGHT EXTRACTION; LIGHT OUTPUT POWER; LIGHTING DEVICES; NANO-ISLANDS; NANO-ROUGHENED; QUANTUM WELL; RAPID METHOD; RED SHIFT; SELF-ASSEMBLED;

LIGHT EMITTING DIODES;

CESIUM; CESIUM CHLORIDE; CHLORIDE; GALLIUM; GALLIUM NITRIDE; INDIUM; INDIUM NITRIDE; NANOMATERIAL;

ARTICLE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; ILLUMINATION; INSTRUMENTATION; NANOTECHNOLOGY; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

CESIUM; CHLORIDES; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; INDIUM; LIGHTING; NANOSTRUCTURES; NANOTECHNOLOGY; SEMICONDUCTORS; SURFACE PROPERTIES;

EID: 78751485029     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.001065     Document Type: Article

References (18)

1. E. Fred, Schubert: Light-Emitting Diodes, (Cambridge University Press, 2003) p. 89.
2. C. Huh, K. S. Lee, E. J. Kang, and S. J. Park, "Improved light-output and electrical performance of InGaN-based, light-emitting diode by microroughening of the p-GaN surface," J. Appl. Phys. 93(11), 9383 (2003).
3. S.-I. Na, G.-Y. Ha, D.-S. Han, S.-S. Kim, J.-Y. Kim, J.-H. Lim, D.-J. Kim, K.-I. Min, and S.-J. Park, "Selective wet etching of p-GaN for efficient GaN-based-light-emitting diodes," IEEE Photon. Technol. Lett. 18(14), 1512-1514 (2006).
4. H.-Y. Lee, X. Y. Huang, and C.-T. Lee, "Light output enhancement of GaN-based roughened LEDs using bias-assisted photoelectrochemical etching method," J. Electrochem. Soc. 155(10), H707 (2008).
5. T. David, T. Fujii, B. Moran, S. Nakamura, S. P. DenBaars, C. Weisbuch, and H. Benisty, "Photonic crystal laser lift-off GaN light-emitting diodes," Appl. Phys. Lett. 88(13), 133514 (2006).
6. Y. Sun, and S. R. Forrest, "Organic light emitting devices with enhanced outcoupling via microlenses fabricated by imprint lithography," J. Appl. Phys. 100(7), 073106 (2006).
7. H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, K. M. Leung, T. C. Lu, and S. C. Wang, "Improvement of light output in GaN-based power chip light-emitting diodes with a nano-rough surface by nanoimprint lithography," Semicond. Sci. Technol. 23(4), 045022 (2008).
8. E.-J. Kang, C. Huh, S.-H. Lee, J.-J. Jung, S.-J. Lee, and S.-J. Park, "Improvement in light-output power of InGaN/GaN LED by formation of nanosize cavities on p-GaN surface," Electrochem. Solid-State Lett. 8(12), G327 (2005).
9. C. C. Hung-Wen Huang, C. C. Kao, J. T. Chu, H. C. Kuo, S. C. Wang, and C. C. Yu, "Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface," IEEE Photon. Technol. Lett. 17(5), 983-985 (2005).
10. M.-A. Tsai, P. Yu, C. H. Chiu, H. C. Kuo, T. C. Lu, and S. H. Lin, "Self-assembled two-dimensional surface structures for beam shaping of GaN-based vertical-injection light-emitting diodes," IEEE Photon. Technol. Lett. 22(1), 12-14 (2010).
11. C.-H. Chan, C.-H. Hou, S.-Z. Tseng, T.-J. Chen, H.-T. Chien, F.-L. Hsiao, C.-C. Lee, Y.-L. Tsai, and C.-C. Chen, "Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate," Appl. Phys. Lett. 95(1), 011110 (2009).
12. Y.-K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, and N. Tansu, "Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures," Opt. Express 17(16), 13747-13757 (2009).
13. C. C. Yang, C. F. Lin, C. M. Lin, C. C. Chang, K. T. Chen, J. F. Chien, and C. Y. Chang, "Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces," Appl. Phys. Lett. 93(20), 203103 (2008).
14. S. M. Huang, Y. Yao, C. Jin, Z. Sun, and Z. J. Dong, "Enhancement of the light output of GaN-based light-emitting diodes using surface-textured indium-tin-oxide transparent ohmic contacts," Displays 29(3), 254-259 (2008).
15. 1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates," Appl. Phys. Lett. 89(9), 091906 (2006).
16. M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, "High efficiency light emitting diode with anisotropically etched GaN-sapphire interface," Appl. Phys. Lett. 95(4), 041109 (2009).
17. 2 Microrod Array and Textured Sidewalls," IEEE Electron Device Lett. 31(1), 35-37 (2010).
18. C. H. Chiu, P. C. Yu, C. H. Chang, C. S. Yang, M. H. Hsu, H. C. Kuo, and M. A. Tsai, "Oblique electron-beam evaporation of distinctive indium-tin-oxide nanorods for enhanced light extraction from InGaN/GaN light emitting diodes," Opt. Express 17(23), 21250-21256 (2009).