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Volumn 95, Issue 4, 2009, Pages

High efficiency light emitting diode with anisotropically etched GaN-sapphire interface

(11) Lo, M H a Tu, P M a Wang, C H a Hung, C W a Hsu, S C b Cheng, Y J a,b Kuo, H C a Zan, H W a Wang, S C a Chang, C Y a Huang, S C c

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b RESEARCH CENTER FOR APPLIED SCIENCES (Taiwan)

c ADVANCED OPTOELECTRONIC TECHNOLOGY INC (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL WET ETCHING; CRYSTAL QUALITIES; DISLOCATION DEFECTS; GAN-SAPPHIRE; HIGH EFFICIENCY; INJECTION CURRENTS; LIGHT-OUTPUT EFFICIENCY; NORMAL DIRECTION; OUTPUT POWER; PYRAMID STRUCTURE; ULTRAVIOLET LIGHT EMITTING DIODES;

CORUNDUM; DISLOCATIONS (CRYSTALS); GALLIUM ALLOYS; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT TRANSMISSION; PHYSICAL OPTICS; SAPPHIRE; SEMICONDUCTING GALLIUM; STRAIN; ULTRAVIOLET RADIATION; WATER ANALYSIS;

GALLIUM NITRIDE;

EID: 68249127583 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3190504 Document Type: Article

Times cited : (37)

References (12)

1
- 1542315187
- 0003-6951,. 10.1063/1.1645992
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, Appl. Phys. Lett. 0003-6951 84, 855 (2004). 10.1063/1.1645992
- (2004) Appl. Phys. Lett. , vol.84 , pp. 855
- Fujii, T.¹ Gao, Y.² Sharma, R.³ Hu, E.L.⁴ Denbaars, S.P.⁵ Nakamura, S.⁶

2
- 68249110036
- 1041-1135,. 10.1109/LPT.2008.919509
- C. -E. Lee, Y. -C. Lee, H. -C. Kuo, T. -C. Lu, and S. -C. Wang, IEEE Photonics Technol. Lett. 1041-1135 20, 659 (2008). 10.1109/LPT.2008.919509
- (2008) IEEE Photonics Technol. Lett. , vol.20 , pp. 659
- Lee, C.-E.¹ Lee, Y.-C.² Kuo, H.-C.³ Lu, T.-C.⁴ Wang, S.-C.⁵

3
- 36048939389
- Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography
- DOI 10.1063/1.2753726
- S. J. Chang, C. F. Shen, W. S. Chen, C. T. Kuo, T. K. Ko, S. C. Shei, and J. K. Sheu, Appl. Phys. Lett. 0003-6951 91, 013504 (2007). 10.1063/1.2753726 (Pubitemid 350092133)
- (2007) Applied Physics Letters , vol.91 , Issue.1 , pp. 013504
- Chang, S.J.¹ Shen, C.F.² Chen, W.S.³ Kuo, C.T.⁴ Ko, T.K.⁵ Shei, S.C.⁶ Sheu, J.K.⁷

4
- 33645528374
- 0003-6951,. 10.1063/1.2189159
- A. David, T. Fujii, E. Matioli, R. Sharma, S. Nakamura, S. P. DenBaars, and C. Weisbuch, Appl. Phys. Lett. 0003-6951 88, 133514 (2006). 10.1063/1.2189159
- (2006) Appl. Phys. Lett. , vol.88 , pp. 133514
- David, A.¹ Fujii, T.² Matioli, E.³ Sharma, R.⁴ Nakamura, S.⁵ Denbaars, S.P.⁶ Weisbuch, C.⁷

5
- 58349099035
- 0003-6951,. 10.1063/1.3067837
- T. A. Truong, L. M. Campos, E. Matioli, I. Meinel, C. J. Hawker, C. Weisbuch, and P. M. Petroff, Appl. Phys. Lett. 0003-6951 94, 023101 (2009). 10.1063/1.3067837
- (2009) Appl. Phys. Lett. , vol.94 , pp. 023101
- Truong, T.A.¹ Campos, L.M.² Matioli, E.³ Meinel, I.⁴ Hawker, C.J.⁵ Weisbuch, C.⁶ Petroff, P.M.⁷

6
- 33750806450
- Fabrication and characterization of GaN-based LEDs grown on chemical wet-etched patterned sapphire substrates
- DOI 10.1149/1.2359701, 074612JES
- Y. J. Lee, H. C. Kuo, T. C. Lu, B. J. Su, and S. C. Wang, J. Electrochem. Soc. 0013-4651 153, G1106 (2006). 10.1149/1.2359701 (Pubitemid 44711576)
- (2006) Journal of the Electrochemical Society , vol.153 , Issue.12
- Lee, Y.J.¹ Kuo, H.C.² Lu, T.C.³ Su, B.J.⁴ Wang, S.C.⁵

7
- 0037455349
- 0003-6951,. 10.1063/1.1537517
- A. Bell, R. Liu, F. A. Ponce, H. Amano, I. Akasaki, and D. Cherns, Appl. Phys. Lett. 0003-6951 82, 349 (2003). 10.1063/1.1537517
- (2003) Appl. Phys. Lett. , vol.82 , pp. 349
- Bell, A.¹ Liu, R.² Ponce, F.A.³ Amano, H.⁴ Akasaki, I.⁵ Cherns, D.⁶

8
- 62549113073
- 0003-6951,. 10.1063/1.3095495
- J. Lee, S. Ahn, S. Kim, D. -U. Kim, H. Jeon, S. -J. Lee, and J. H. Baek, Appl. Phys. Lett. 0003-6951 94, 101105 (2009). 10.1063/1.3095495
- (2009) Appl. Phys. Lett. , vol.94 , pp. 101105
- Lee, J.¹ Ahn, S.² Kim, S.³ Kim, D.-U.⁴ Jeon, H.⁵ Lee, S.-J.⁶ Baek, J.H.⁷

9
- 0035874864
- 0021-4922,. 10.1143/JJAP.40.L583
- K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, Jpn. J. Appl. Phys., Part 2 0021-4922 40, L583 (2001). 10.1143/JJAP.40.L583
- (2001) Jpn. J. Appl. Phys., Part 2 , vol.40 , pp. 583
- Tadatomo, K.¹ Okagawa, H.² Ohuchi, Y.³ Tsunekawa, T.⁴ Imada, Y.⁵ Kato, M.⁶ Taguchi, T.⁷

10
- 56249092420
- 0003-6951,. 10.1063/1.2998596
- E. -H. Park, J. Jang, S. Gupta, I. Ferguson, C. -H. Kim, S. -K. Jeon, and J. -S. Park, Appl. Phys. Lett. 0003-6951 93, 191103 (2008). 10.1063/1.2998596
- (2008) Appl. Phys. Lett. , vol.93 , pp. 191103
- Park, E.-H.¹ Jang, J.² Gupta, S.³ Ferguson, I.⁴ Kim, C.-H.⁵ Jeon, S.-K.⁶ Park, J.-S.⁷

11
- 0001586589
- 0003-6951,. 10.1063/1.1314877
- H. Heinke, V. Kirchner, S. Einfeldt, and D. Hommel, Appl. Phys. Lett. 0003-6951 77, 2145 (2000). 10.1063/1.1314877
- (2000) Appl. Phys. Lett. , vol.77 , pp. 2145
- Heinke, H.¹ Kirchner, V.² Einfeldt, S.³ Hommel, D.⁴

12
- 33746388385
- Photoluminescence of a-plane GaN: Comparison between MOCVD and HVPE grown layers
- DOI 10.1002/pssc.200565416, Papers Presented at 6th International Conference on Nitride Semiconductors, ICNS-6
- P. P. Paskov, R. Schifano, T. Malinauskas, T. Paskova, J. P. Bergman, B. Monemar, S. Figge, D. Hommel, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, Phys. Status Solidi C 1610-1634 3, 1499 (2006). 10.1002/pssc.200565416 (Pubitemid 44121151)
- (2006) Physica Status Solidi (C) Current Topics in Solid State Physics , vol.3 , pp. 1499-1502
- Paskov, P.P.¹ Schifano, R.² Malinauskas, T.³ Paskova, T.⁴ Bergman, J.P.⁵ Monemar, B.⁶ Figge, S.⁷ Hommel, D.⁸ Haskell, B.A.⁹ Fini, P.T.¹⁰ Speck, J.S.¹¹ Nakamura, S.¹²

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