Leakage current origins and passivation effect of GaN-based light emitting diodes fabricated with Ag p -contacts

Applied Physics Letters

Volumn 92, Issue 9, 2008, Pages

  Kim, Hyunsoo ^a   Cho, Jaehee ^a   Park, Yongjo ^a   Seong, Tae Yeon ^b  

^a Samsung Electro Mechanics   (South Korea)

^b Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC VARIABLES MEASUREMENT; GALLIUM NITRIDE; LIGHT EMITTING DIODES; PASSIVATION;

PARASITIC DIODE; REVERSE LEAKAGE; SURFACE MIGRATION;

LEAKAGE CURRENTS;

EID: 40549109930     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2844887     Document Type: Article

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