Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p -type GaN:Mg surfaces

Applied Physics Letters

Volumn 93, Issue 20, 2008, Pages

  Yang, Chung Chieh ^a   Lin, Chia Feng ^a   Lin, Chun Min ^a   Chang, Cheng Chien ^a   Chen, Kuei Ting ^a   Chien, Jui Fen ^a   Chang, Chung Ying ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA COMPRESSION; ELECTROLUMINESCENCE; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT SOURCES; MAGNESIUM PRINTING PLATES; NITRIDES; OHMIC CONTACTS; SEMICONDUCTING GALLIUM;

ACTIVE LAYERS; APPLICATIONS.; COMPRESSION STRAINS; EL SPECTRUMS; LIGHT EMITTING DIODE LEDS; LIGHT EXTRACTIONS; LIGHT OUTPUT POWERS; MA OPERATIONS; MG SURFACES; NANOPOROUS; NANOPOROUS SURFACES; OPERATING VOLTAGES; PEAK WAVELENGTHS; PHOTOELECTROCHEMICAL;

LIGHT EMITTING DIODES;

EID: 56849117069     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3027068     Document Type: Article

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