Characterization of Ni(Si,Ge) films on epitaxial SiGe(100) formed by microwave annealing

Applied Physics Letters

Volumn 101, Issue 9, 2012, Pages

  Hu, Cheng ^a   Xu, Peng ^a   Fu, Chaochao ^a   Zhu, Zhiwei ^a   Gao, Xindong ^b   Jamshidi, Asghar ^c   Noroozi, Mohammad ^c   Radamson, Henry ^c   Wu, Dongping ^a   Zhang, Shi Li ^a,b  

^a FUDAN UNIVERSITY   (China)

^b UPPSALA UNIVERSITY   (Sweden)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING CONDITION; DEFECT GENERATION; EPITAXIALLY GROWN; HALOGEN LAMPS; HEATING MECHANISMS; LOW TEMPERATURES; MICROWAVE ANNEALING; MORPHOLOGY ANALYSIS; PHASE FORMATIONS; RESISTIVITY MAPPING; SIGE(100); SILICIDATION; SILICIDE FORMATION;

EPITAXIAL FILMS; EPITAXIAL GROWTH; MICROWAVE HEATING; RAPID THERMAL PROCESSING; SILICIDES; SILICON;

GERMANIUM;

EID: 84865845972     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4748111     Document Type: Article

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