SCOPUS 정보 검색 플랫폼

Volumn 14, Issue 7, 2011, Pages

Epitaxy of ultrathin NiSi2 films with predetermined thickness

Author keywords

[No Author keywords available]

Indexed keywords

NI ATOMS; PROOF OF CONCEPT; SI SUBSTRATES; SI(1 0 0); SILICIDATION; SPECIFIC RESISTIVITIES; SUBSTRATE BIAS; ULTRA-THIN;

WET ETCHING;

EPITAXIAL GROWTH;

EID: 79959534671 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3580618 Document Type: Article

Times cited : (24)

References (11)

1
- 4344663116
- 10.1116/1.1688364
- S.-L. Zhang and U. Smith, J. Vac. Sci. Technol. A, 22, 1361 (2004). 10.1116/1.1688364
- (2004) J. Vac. Sci. Technol. A , vol.22 , pp. 1361
- Zhang, S.-L.¹ Smith, U.²

2
- 79959544705
- International Technology Roadmafor Semiconductors, edition.
- International Technology Roadmap for Semiconductors, 2009 edition, http://public.itrs.net/Links/2009ITRS/Home2009.htm.
- (2009)

3
- 77949851089
- 10.1063/1.3291679
- J. Luo, Z. J. Qiu, C. L. Zha, Z. Zhang, D. P. Wu, J. Lu, J. kerman, M. stling, L. Hultman, and S.-L. Zhang, Appl. Phys. Lett., 96, 031911 (2010). 10.1063/1.3291679
- (2010) Appl. Phys. Lett. , vol.96 , pp. 031911
- Luo, J.¹ Qiu, Z.J.² Zha, C.L.³ Zhang, Z.⁴ Wu, D.P.⁵ Lu, J.⁶ Kerman, J.⁷ Stling, M.⁸ Hultman, L.⁹ Zhang, S.-L.¹⁰

4
- 77249105519
- 10.1063/1.3323097
- Z. Zhang, S.-L. Zhang, B. Yang, Y. Zhu, S. M. Rossnagel, S. Gaudet, A. J. Kellock, J. Jordan-Sweet, and C. Lavoie, Appl. Phys. Lett., 96, 071915 (2010). 10.1063/1.3323097
- (2010) Appl. Phys. Lett. , vol.96 , pp. 071915
- Zhang, Z.¹ Zhang, S.-L.² Yang, B.³ Zhu, Y.⁴ Rossnagel, S.M.⁵ Gaudet, S.⁶ Kellock, A.J.⁷ Jordan-Sweet, J.⁸ Lavoie, C.⁹

5
- 78650726526
- 10.1063/1.3529459
- Z. Zhang, B. Yang, Y. Zhu, S. Gaudet, S. M. Rossnagel, A. J. Kellock, A. Ozcan, C. Murray, P. Desjardins, S.-L. Zhang, Appl. Phys. Lett., 97, 252108 (2010). 10.1063/1.3529459
- (2010) Appl. Phys. Lett. , vol.97 , pp. 252108
- Zhang, Z.¹ Yang, B.² Zhu, Y.³ Gaudet, S.⁴ Rossnagel, S.M.⁵ Kellock, A.J.⁶ Ozcan, A.⁷ Murray, C.⁸ Desjardins, P.⁹ Zhang, S.-L.¹⁰

7
- 60349099309
- 10.1103/PhysRevLett.102.045003
- J. Andersson and A. Anders, Phys. Rev. Lett., 102, 045003 (2009). 10.1103/PhysRevLett.102.045003
- (2009) Phys. Rev. Lett. , vol.102 , pp. 045003
- Andersson, J.¹ Anders, A.²

8
- 0003921499
- Vol., N. G. Einsprich and G. B. Larrabee, Editors, Cha, Academic, New York.
- M.-A. Nicolet and S. S. Lau, in VLSI Electronics-Microstructure Sciences, Vol. 6, N. G. Einsprich, and, G. B. Larrabee, Editors, Chap., Academic, New York (1983).
- (1983) VLSI Electronics-Microstructure Sciences , vol.6
- Nicolet, M.-A.¹ Lau, S.S.²

9
- 77952350377
- 10.1063/1.3384997
- K. De Keyser, C. Van Bockstael, R. L. Van Meirhaeghe, C. Detavernier, E. Verleysen, H. Bender, J. Jordan-Sweet, and C. Lavoie, Appl. Phys. Lett., 96, 173503 (2010). 10.1063/1.3384997
- (2010) Appl. Phys. Lett. , vol.96 , pp. 173503
- De Keyser, K.¹ Van Bockstael, C.² Van Meirhaeghe, R.L.³ Detavernier, C.⁴ Verleysen, E.⁵ Bender, H.⁶ Jordan-Sweet, J.⁷ Lavoie, C.⁸

10
- 77955748980
- 10.1149/1.3473723
- J. Lu, J. Luo, S.-L. Zhang, M. stling, and L. Hultman, Electrochem. Solid-State Lett., 13, H360 (2010). 10.1149/1.3473723
- (2010) Electrochem. Solid-State Lett. , vol.13 , pp. 360
- Lu, J.¹ Luo, J.² Zhang, S.-L.³ Stling, M.⁴ Hultman, L.⁵

11
- 0000974542
- 10.1016/0010-4655(88)90148-8
- W. Moller, W. Eckstein, and J. P. Biersack, Comput. Phys. Comm., 51, 355 (1988). 10.1016/0010-4655(88)90148-8
- (1988) Comput. Phys. Comm. , vol.51 , pp. 355
- Moller, W.¹ Eckstein, W.² Biersack, J.P.³

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