Application of high-resolution x-ray diffraction for detecting defects in SiGe(C) materials

Journal of Physics Condensed Matter

Volumn 17, Issue 22, 2005, Pages

  Radamson, Henry H ^a   Hallstedt, Julius ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); CRYSTAL GROWTH; CRYSTAL SYMMETRY; DEFECTS; MULTILAYERS; THERMODYNAMIC STABILITY; X RAY ANALYSIS; X RAY DIFFRACTION;

DOPANT; EPITAXIAL QUALITY; LATTICE MAPPING; SIGE (C) MATERIALS;

SILICON COMPOUNDS;

EID: 21044456610     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/17/22/020     Document Type: Article

References (10)

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