High-speed epitaxial growth of β- SiC film on Si (111) single crystal by laser chemical vapor deposition

Journal of the American Ceramic Society

Volumn 95, Issue 9, 2012, Pages 2782-2784

  Zhang, Song ^a   Tu, Rong ^a   Goto, Takashi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION TEMPERATURES; HIGH-SPEED; IN-PLANE ORIENTATION; LASER CHEMICAL VAPOR DEPOSITION; LASER POWER; SI (1 1 1); SI(111) SUBSTRATE; SIC FILMS; TOTAL PRESSURE;

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; SILICON; SILICON CARBIDE; VAPORS;

SILICON WAFERS;

EID: 84865711575     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2012.05354.x     Document Type: Conference Paper

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