High-speed epitaxial growth of (100)-oriented CeO2 film on r-cut sapphire by laser chemical vapor deposition

Surface and Coatings Technology

Volumn 205, Issue 16, 2011, Pages 4079-4082

  Zhao, Pei ^a   Ito, Akihiko ^a   Tu, Rong ^a   Goto, Takashi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

CeO2; High deposition rate; Laser chemical vapor deposition; R cut sapphire

Indexed keywords

CEO2; DEPOSITION TEMPERATURES; ELONGATED GRAINS; HIGH DEPOSITION RATES; HIGH-SPEED; IN-PLANE ORIENTATION; LASER CHEMICAL VAPOR DEPOSITION; LASER POWER; METAL-ORGANIC; R-CUT SAPPHIRE;

ALUMINUM; CHEMICAL VAPOR DEPOSITION; DEPOSITION; DEPOSITION RATES; EPITAXIAL GROWTH; SAPPHIRE; TUNGSTEN;

LASER CHEMISTRY;

EID: 79953225826     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2011.02.062     Document Type: Article

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