SCOPUS 정보 검색 플랫폼

Volumn 343-344, Issue 1-2, 1999, Pages 650-655

Low-temperature epitaxial growth of cubic SiC thin films on Si(111) using supersonic molecular jet of single source precursors

(3) Boo, Jin Hyo a Ustin, Scott A b,c Ho, Wilson b,c

a Sungkyunkwan University (South Korea)

b Laboratory of Atomic and Solid State Physics and Sibley School of Mechanical and Aerospace Engineering (United States)

c Cornell University (United States)

Author keywords

Carbonization; Cubic SiC thin film; Single source precursor; Supersonic jet epitaxy; X ray phi scan measurement

Indexed keywords

CARBONIZATION; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; FILM GROWTH; JETS; LIGHT REFLECTION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SILANES; SILICON CARBIDE; SINGLE CRYSTALS; SUPERSONIC FLOW;

SUPERSONIC MOLECULAR JET EPITAXY;

SEMICONDUCTING FILMS;

EID: 0032669144 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)01662-9 Document Type: Article

Times cited : (20)

References (16)

1
- 0025578479
- R.F. Davis, J.W. Palmour, J.A. Edmond, IEDM (1990) 785.
- (1990) IEDM , pp. 785
- Davis, R.F.¹ Palmour, J.W.² Edmond, J.A.³

2
- 0019283390
- S. Nishino, Y. Hazuki, H. Matsunami, T. Tanaka, J. Electrochem. Soc. 127 (1980) 2674.
- (1980) J. Electrochem. Soc. , vol.127 , pp. 2674
- Nishino, S.¹ Hazuki, Y.² Matsunami, H.³ Tanaka, T.⁴

3
- 33747502586
- S. Nishino, J.A. Powell, H.A. Will, Appl. Phys. Lett. 42 (1983) 460.
- (1983) Appl. Phys. Lett. , vol.42 , pp. 460
- Nishino, S.¹ Powell, J.A.² Will, H.A.³

4
- 0040593248
- A. Addamiano, P.H. Klein, J. Cryst. Growth 70 (1984) 291.
- (1984) J. Cryst. Growth , vol.70 , pp. 291
- Addamiano, A.¹ Klein, P.H.²

5
- 0021455373
- K. Sasaki, E. Sakuma, S. Misawa, S. Yoshida, S. Gonda, Appl. Phys. Lett. 45 (1984) 72.
- (1984) Appl. Phys. Lett. , vol.45 , pp. 72
- Sasaki, K.¹ Sakuma, E.² Misawa, S.³ Yoshida, S.⁴ Gonda, S.⁵

6
- 0022026873
- P. Liaw, R.F. Davis, J. Electrochem. Soc. 132 (1985) 642.
- (1985) J. Electrochem. Soc. , vol.132 , pp. 642
- Liaw, P.¹ Davis, R.F.²

7
- 0021391805
- A. Addamiano, J.A. Sprague, Appl. Phys. Lett. 44 (1984) 525.
- (1984) Appl. Phys. Lett. , vol.44 , pp. 525
- Addamiano, A.¹ Sprague, J.A.²

8
- 0024606058
- M. Iwami, M. Hirai, M. Kusaka, Y. Yokota, H. Matsunami, Jpn. J. Appl. Phys. 28 (1989) L293.
- (1989) Jpn. J. Appl. Phys. , vol.28
- Iwami, M.¹ Hirai, M.² Kusaka, M.³ Yokota, Y.⁴ Matsunami, H.⁵

9
- 0030085243
- C.H. Wu, C. Jacab, X.J. Ning, S. Nishino, P. Pirouz, J. Crystal Growth 158 (1996) 480.
- (1996) J. Crystal Growth , vol.158 , pp. 480
- Wu, C.H.¹ Jacab, C.² Ning, X.J.³ Nishino, S.⁴ Pirouz, P.⁵

10
- 33744717782
- Y. Avigal, M. Schieber, R. Levin, J. Cryst. Growth 24/25 (1974) 188.
- (1974) J. Cryst. Growth , vol.24-25 , pp. 188
- Avigal, Y.¹ Schieber, M.² Levin, R.³

11
- 33751156978
- J.-H. Boo, K.-S. Yu, Y. Kim, S.H. Yeon, I.N. Jung, Chem. Mater. 7 (1995) 694.
- (1995) Chem. Mater. , vol.7 , pp. 694
- Boo, J.-H.¹ Yu, K.-S.² Kim, Y.³ Yeon, S.H.⁴ Jung, I.N.⁵

12
- 36449002004
- I. Golecki, F. Reidinger, J. Marti, Appl. Phys. Lett, 60 (1992) 1703.
- (1992) Appl. Phys. Lett , vol.60 , pp. 1703
- Golecki, I.¹ Reidinger, F.² Marti, J.³

13
- 0006735339
- C. Yuan, A.J. Steckl, M.J. Loboda, Appl. Phys. Lett. 64 (1994) 3000.
- (1994) Appl. Phys. Lett. , vol.64 , pp. 3000
- Yuan, C.¹ Steckl, A.J.² Loboda, M.J.³

14
- 0032121824
- J.-H. Boo, S.A. Ustin, W. Ho, Thin Solid Films 324 (1998) 124.
- (1998) Thin Solid Films , vol.324 , pp. 124
- Boo, J.-H.¹ Ustin, S.A.² Ho, W.³

15
- 0030687114
- J.-H. Boo, S.A. Ustin, W. Ho, P.E. Morris, H.P. Maruska, I.-H. Kim, C. Sung, Mater. Res. Soc. Symp. Proc. 441 (1997) 705.
- (1997) Mater. Res. Soc. Symp. Proc. , vol.441 , pp. 705
- Boo, J.-H.¹ Ustin, S.A.² Ho, W.³ Morris, P.E.⁴ Maruska, H.P.⁵ Kim, I.-H.⁶ Sung, C.⁷

16
- 0026973248
- K. Takahashi, S. Nishino, J. Saraie, J. Electrochem. Soc. 139 (1992) 3565.
- (1992) J. Electrochem. Soc. , vol.139 , pp. 3565
- Takahashi, K.¹ Nishino, S.² Saraie, J.³

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