Low-temperature growth of high quality AlN films on carbon face 6H-SiC

Physica Status Solidi - Rapid Research Letters

Volumn 2, Issue 1, 2008, Pages 13-15

  Kim, Myunghee ^a   Ohta, Jitsuo ^b,c   Kobayashi, Atsushi ^b   Fujioka, Hiroshi ^b,c   Oshima, Masaharu ^a,d  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; FILM GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; LOW TEMPERATURE EFFECTS; PULSED LASER DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; STRUCTURAL PROPERTIES; SUBSTRATES;

ATOMICALLY FLAT CARBON FACE; IN-SITU REFLECTION HIHG-ENERGY ELECTRON DIFFRACTION; LOW-TEMPERATURE GROWTH;

SEMICONDUCTING FILMS;

EID: 38849138946     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200701246     Document Type: Article

References (14)

1. Y. Taniyasu et al., Nature 441, 325 (2006).
2. I. Akasaki et al., Jpn. J. Appl. Phys. 36, 5393 (1996).
3. M. A. Khan et al., Electron. Lett. 32, 357 (1996).
4. W. Hageman et al., phys. stat. sol. (a) 188, 783 (2001).
5. T. Shibata et al., phys. stat. sol. (c) 7, 2023 (2003).
6. L. Liu et al., Mater. Sci. Eng. R 37, 61 (2002).
7. M. Harada et al., Jpn. J. Appl. Phys. 42, 2829 (2003).
8. M. H. Kim et al., Appl. Phys. Lett. 91, 151903 (2007).
9. J. Ohta et al., Appl. Phys. Lett. 83, 3075 (2003).
10. M. H. Kim et al., Appl. Phys. Lett. 89, 031916 (2006).
11. A. Kobayashi et al., Appl. Phys. Lett. 90, 041908 (2007).
12. M. Seelmann-Eggebert et al., Appl. Phys. Lett. 71, 2635 (1997).
13. X. Q. Shen et al., J. Cryst. Growth 218, 155 (2000).
14. N. Onojima et al., Jpn. J. Appl. Phys. 42, L445 (2003).