Improved electrical and thermal properties of Ag contacts for GaN-based flip-chip light-emitting diodes by using a NiZn alloy capping layer

Superlattices and Microstructures

Volumn 46, Issue 4, 2009, Pages 578-584

  Jung, Se Yeon ^a   Kim, Yoon Han ^a   Kong, Young Shik ^b   Seong, Tae Yeon ^a  

^a Korea University   (South Korea)

^b Chonbuk National University   (South Korea)

Author keywords

Ag reflector; LED; NiZn capping layer; p type Ohmic contact

Indexed keywords

AG CONTACTS; AG REFLECTOR; CAPPING LAYER; ELECTRICAL PROPERTY; FLIP-CHIP LIGHT-EMITTING DIODES; INTERFACIAL VOIDS; LED; NIZN CAPPING LAYER; OUTPUT POWER; P-TYPE OHMIC CONTACT; THERMAL PROPERTIES; X RAY PHOTOEMISSION SPECTROSCOPY;

AGGLOMERATION; AUGER ELECTRON SPECTROSCOPY; CURRENT DENSITY; ELECTRIC ARCS; ELECTRIC CONTACTORS; ELECTRIC PROPERTIES; EMISSION SPECTROSCOPY; FLIP CHIP DEVICES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; OHMIC CONTACTS; ORGANIC LIGHT EMITTING DIODES (OLED); REFLECTION; SEMICONDUCTING GALLIUM; SILVER; SILVER ALLOYS; THERMODYNAMIC PROPERTIES; ZINC;

LIGHT EMITTING DIODES;

EID: 70249086189     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2009.04.007     Document Type: Article

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