The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes

Nanotechnology

Volumn 21, Issue 2, 2010, Pages

  Jang, Ho Won ^a,b   Ryu, Seong Wook ^a   Yu, Hak Ki ^a   Lee, Sanghan ^a   Lee, Jong Lam ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EXTRACTION; LIGHT-EXTRACTION EFFICIENCY; NANOTEXTURED; NANOTEXTURING; P-CONTACTS; PHOTOCHEMICAL ETCHING; SOLID STATE LIGHTING; SURFACE-TEXTURING; TOP SURFACE;

CURRENT DENSITY; EXTRACTION; GALLIUM NITRIDE; LIGHT EMISSION; PHOTONIC CRYSTALS; REFLECTION; SEMICONDUCTING GALLIUM; SILVER;

LIGHT EMITTING DIODES;

GALLIUM NITRATE; NANOMATERIAL; SILVER; GALLIUM; GALLIUM NITRIDE; INDIUM; INDIUM NITRIDE;

ARTICLE; LIGHT; LIGHT EMITTING DIODE; LIGHT REFRACTION; LUMINESCENCE; PHOTOCHEMISTRY; PRIORITY JOURNAL; ROOM TEMPERATURE; SOLID STATE; SURFACE PROPERTY; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; EQUIPMENT; EQUIPMENT DESIGN; EVALUATION; ILLUMINATION; INSTRUMENTATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; MICROELECTRODE; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

CRYSTALLIZATION; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; INDIUM; LIGHTING; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MICROELECTRODES; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTORS; SURFACE PROPERTIES;

EID: 71549141354     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/2/025203     Document Type: Article

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