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Volumn 106, Issue 9, 2009, Pages

Electron transport properties of antimony doped Sn O2 single crystalline thin films grown by plasma-assisted molecular beam epitaxy

(4) White, M E a Bierwagen, O a Tsai, M Y a Speck, J S a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY DOPING; BULK ELECTRONS; DETRIMENTAL EFFECTS; ELECTRON ACTIVATION ENERGY; ELECTRON CONCENTRATION; EPITAXIAL THIN FILMS; EXPERIMENTAL UNCERTAINTY; HALL MEASUREMENTS; HETERO INTERFACES; HIGH QUALITY; LOWER LIMITS; N-TYPE DOPING; PLANE SAPPHIRE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SB DOPING; SB-DOPED; SINGLE-CRYSTALLINE; SINGLE-CRYSTALLINE THIN FILMS; TEMPERATURE DEPENDENT;

ACTIVATION ENERGY; ANTIMONY; ATOMIC FORCE MICROSCOPY; CONCENTRATION (PROCESS); CORUNDUM; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; ELECTRON TRANSPORT PROPERTIES; EPITAXIAL FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR QUANTUM WIRES; TIN; TRANSPORT PROPERTIES;

DOPING (ADDITIVES);

EID: 70450274966 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3254241 Document Type: Article

Times cited : (79)

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