Strain, composition and crystalline perfection in thin SiGe layers studied by Raman spectroscopy

Thin Solid Films

Volumn 517, Issue 1, 2008, Pages 265-268

  Perova, T S ^a   Moore, R A ^a   Lyutovich, K ^b   Oehme, M ^b   Kasper, E ^b  

^a TRINITY COLLEGE DUBLIN   (Ireland)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Micro Raman spectroscopy; Molecular beam epitaxy; Raman line width; Strain relaxation; Thin SiGe layer

Indexed keywords

CRYSTAL GROWTH; CRYSTALLINE MATERIALS; EPITAXIAL LAYERS; GERMANIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PHONONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICON; SILICON ALLOYS; SPECTRUM ANALYSIS;

CRYSTALLINE PERFECTIONS; CRYSTALLINE QUALITIES; GE CONTENTS; GROWTH CONDITIONS; LINE WIDTHS; MICRO-RAMAN SPECTROSCOPY; MOLECULAR-BEAM EPITAXIES; PHONON LINES; RAMAN BANDS; RAMAN LINE WIDTH; SIGE LAYERS; TEMPERATURE REGIMES; THIN SIGE LAYER;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 54949157686     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.060     Document Type: Article

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