Raman scattering of capped and uncapped carbon-induced Ge dots under hydrostatic pressure

Physica Status Solidi (B) Basic Research

Volumn 244, Issue 1, 2007, Pages 76-81

  Bernardi, A ^a   Reparaz, J S ^a   Goni A R ^a,b   Alonso, M I ^a   Garriga, M ^a  

^a CSIC   (Spain)

^b INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANÇATS ICREA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; HYDRAULICS; HYDROSTATIC PRESSURE; NANOCRYSTALS; RAMAN SCATTERING; SEMICONDUCTOR QUANTUM DOTS;

CAP LAYERS; CAPPED SAMPLES; ELECTRONIC TRANSITION; GE QUANTUM DOT; MEASUREMENTS OF; PRESSURE COEFFICIENTS; RESONANT ENHANCEMENTS; SILICON MATRIX;

LATTICE VIBRATIONS;

EID: 33847055888     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200672543     Document Type: Conference Paper

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