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Volumn 246, Issue 3, 2009, Pages 548-552

Measurement of phonon pressure coefficients for a precise determination of deformation potentials in SiGe alloys

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EID: 70449367214     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200880531     Document Type: Article
Times cited : (6)

References (19)
  • 16
    • 70449415513 scopus 로고    scopus 로고
    • The second-order acoustic-phonon feature of the Si substrate exhibits a negative pressure coefficient, thus, it shifts in opposite direction as the Ge-Ge Raman mode with in-creasing pressure. As a consequence, the precise determination of the Ge-Ge peak position is impaired by the former only in a narrow pressure range around 1 GPa (see inset of Fig. 1, for instance)
    • The second-order acoustic-phonon feature of the Si substrate exhibits a negative pressure coefficient, thus, it shifts in opposite direction as the Ge-Ge Raman mode with increasing pressure. As a consequence, the precise determina-tion of the Ge-Ge peak position is impaired by the former only in a narrow pressure range around 1 GPa (see inset of Fig. 1, for instance).
  • 17
    • 70449452501 scopus 로고
    • Numerical Data and Functional Relationships in Science and Technolog, Landolt-Börnstein, New Series, edited by O. Madelung, H. Weiss, and M. Schulz (Springer, Heidelberg), Section 2
    • Numerical Data and Functional Relationships in Science and Technolog, Landolt-Börnstein, New Series Vol. 17, edited by O. Madelung, H. Weiss, and M. Schulz (Springer, Heidelberg, 1982), Section 2, pp. 64 and 107.
    • (1982) , vol.17 , pp. 64-107


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.