Neutron-induced failure in silicon IGBTs, silicon super-junction and SiC MOSFETs

IEEE Transactions on Nuclear Science

Volumn 59, Issue 4 PART 1, 2012, Pages 866-871

  Griffoni, Alessio ^a,b   Van Duivenbode, Jeroen ^c   Linten, Dimitri ^a   Simoen, Eddy ^a   Rech, Paolo ^d,e   Dilillo, Luigi ^b   Wrobel, Frédéric ^f   Verbist, Patrick ^a   Groeseneken, Guido ^g  

^a IMEC   (Belgium)

^b OSRAM   (Italy)

^c ASML   (Netherlands)

^d LIRMM   (France)

^e FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^f UNIVERSITÉ MONTPELLIER II   (France)

^g Katholieke Universiteit Leuven   (Belgium)

Author keywords

Insulated gate bipolar transistor (IGBT); neutrons; power MOSFET; silicon carbide (SiC); single event burnout (SEB); single event gate rupture (SEGR); super junction

Indexed keywords

MOSFETS; POWER DEVICES; POWER MOSFET; SINGLE-EVENT BURNOUTS; SINGLE-EVENT GATE RUPTURE; SUPER-JUNCTION;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MOSFET DEVICES; NEUTRONS;

SILICON CARBIDE;

EID: 84865373838     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2011.2180924     Document Type: Article

References (30)

1. P. L. Hower, S. Pendharkar, and T. Efland, "Current status and future trends in silicon power devices," in Proc. IEEE Int. Electron Devices Meeting (IEDM), 2010, pp. 308-311.
2. M. Östling, "Silicon carbide based power devices," in Proc. IEEE Int. Electron Devices Meeting (IEDM), 2010, pp. 316-319.
3. M. T. Rahim, "Ultra high voltage semiconductor power devices for grid applications," in Proc. IEEE Int. Electron Devices Meeting (IEDM), 2010, pp. 320-323.
4. A. Mittal, "Energy efficiency enabled by power electronics," in Proc. IEEE Int. Electron Devices Meeting (IEDM), 2010, pp. 10-16.
5. M. Kanechika, T. Uesugi, and T.Kach, "Advanced SiC andGaNpower electronics for automotive systems," in Proc. IEEE Int. Electron Devices Meeting (IEDM), 2010, pp. 324-327.
6. G. Deboy and F. Udrea, "Superjunction devices and technologies-Benefits and limitations of a revolutionary step in power electronics," in Proc. Eur. Conf. Power Electronics and Applications (EPE), 2007.
7. D. L. Oberg, J. L.Wed, E. Normand, P. P. Majewski, and S. A.Wende, "First observations of power MOSFET burnout with high energy neutrons," IEEE Trans. Nucl. Sci., vol. 43, no. 6, pp. 2913-2920, Dec. 1996. (Pubitemid 126770949)
8. E. Normand, J. L. Wert, D. L. Oberg, P. R. Majewski, P. Voss, and S. A. Wender, "Neutron-induced single event burnout in high voltage electronics," IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 2358-2366, Dec. 1997. (Pubitemid 127827204)
9. T. Shoji, S. Nishida, T. Fujikawa,N.Nose, M. Ishiko, and K. Hamada, "Neutron induced single-event burnout of IGBT," in Proc. Int. Power Electronics Conf. (IPEC), 2010, pp. 142-148.
10. S. Nishida, T. Shoji, T. Ohnishi, T. Fujikawa, N. Nose, M. Ishiko, and K. Hamada, "Cosmic ray ruggedness of IGBTs for hybrid vehicles," in Proc. Int. Symp. Power Semiconductor Devices & IC's (ISPSD), 2010, pp. 129-132.
11. W. Kaindl, G. Soelkner, H. J. Schulze, and G. Wachutka, "Cosmic radiation-induced failure mechanism of high voltage IGBT," in Proc. Int. Symp. Power Semiconductor Devices & IC's (ISPSD), 2005, pp. 199-202. (Pubitemid 41616224)
12. S. Huang, G. A. J. Amaratunga, and F. Udrea, "Analysis of SEB and SEGR in super-junction MOSFETs," IEEE Trans. Nucl. Sci., vol. 47, no. 6, pp. 2640-2647, Dec. 2000. (Pubitemid 32321354)
13. M. Antoniou, F. Udrea, and F. Bauer, "The 3.3kV semi-superjunction IGBT for increased cosmic ray induced breakdown immunity," in Proc. Int. Symp. Power Semiconductor Devices & IC's (ISPSD), 2009, pp. 168-171.
14. M. Antoniou, F. Udrea, and F. Bauer, "Robustness of superjunction structures against cosmic ray induced breakdown," Solid-State Electron., vol. 54, no. 4, pp. 385-391, 2010.
15. N. Ikeda, S. Kuboyama, and S. Matsuda, "Single-event burnout of super-junction power MOSFETs," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3332-3335, Dec. 2004. (Pubitemid 40044012)
16. S. Kuboyama, C. Kamezawa, N. Ikeda, T. Hirao, and H. Ohyama, "Anomalous charge collection in silicon carbide Schottky barrier diodes and resulting permanent damage and single-event burnout," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3343-3348, Dec. 2006. (Pubitemid 46113332)
17. L. Scheick, L. Selva, and H. Becker, "Displacement damage-induced catastrophic second breakdown in silicon carbide Schottky power diodes," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3193-3200, Dec. 2004. (Pubitemid 40048636)
18. S. Kuboyama, C. Kamezawa, Y. Satoh, T. Hirao, and H. Ohyama, "Single-event burnout of silicon carbide Schottky barrier diodes caused by high energy protons," IEEE Trans. Nucl. Sci., vol. 54, no. 6, pp. 2379-2383, Dec. 2007. (Pubitemid 350274094)
19. The Svedberg Lab, Quasi-Monoenergetic Neutron Beam Facility. [Online]. Available: http://www.tsl.uu.se/radiation/testing/tsl/beam/data/qmn.html
20. S. Liu, M. Boden, H. Cao, E. Sanchez, and J. L. Titus, "Evaluation of worst-case test conditions for SEE on power DMOSFETs," in Proc. IEEE Radiation Effects Data Workshop, Jul. 2006, pp. 165-171.
21. S. Liu, J. L. Titus, M. Zafrani, H. Cao, D. Carrier, and P. Sherman, "Worst-case test conditions of SEGR for power DMOSFETs," IEEE Trans. Nucl. Sci., vol. 57, no. 1, pp. 279-287, Feb. 2010.
22. J. van Duivenbode and B. Smet, "An empiric approach to establishing MOSFET failure rate induced by single-event burnout," in Proc. Power Electronics and Motion Control Conf. (EPE-PEMC), 2008, pp. 102-107.
23. X. Zhang, "Failure mechanism investigation for silicon carbide power devices," Ph.D. dissertation, Univ. Maryland, USA, 2006.
24. B. J. Baliga, Fundamental of Power Semiconductor Devices. New York: Springer, 2008.
25. J. R. Letaw and E. Normand, "Guidelines for predicting single-event upsets in neutron environments [RAM devices]," IEEE Trans. Nucl. Sci., vol. 38, no. 6, pp. 1500-1506, 1991.
26. H. H. K. Tang, "Nuclear physics of cosmic ray interaction with semiconductormaterials: Particle-induced soft errors from a physicist's perspective," IBM J. Res. Develop., vol. 40, no. 1, pp. 91-108, 1996. (Pubitemid 126561440)
27. J. R. Schwank, M. R. Shaneyfelt, J. Baggio, P. E. Dodd, J. A. Felix, V. Ferlet-Cavrois, P. Paillet, G. K. Lum, S. Girard, and E. Blackmore, "Effects of angle of incidence on proton and neutron-induced singleevent latchup," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3122-3133, Dec. 2006.
28. F. W. Sexton, "Destructive single-event effects in semiconductor devices and ICs," IEEE Trans. Nucl. Sci., vol. 50, no. 3, pp. 603-621, Jun. 2003.
29. M. Allenspach, J. R. Brews, I.Mouret, R. D. Schrimpf, and K. F. Galloway, "Evaluation of SEGR threshold in power MOSFETs," IEEE Trans. Nucl. Sci., vol. 41, no. 6, pp. 2160-2166, Dec. 1994.
30. G. H. Johnson, J. M. Palau, C. Dachs, K. F. Galloway, and R. D. Schrimpf, "A review of the techniques used for modeling single-event effects in powerMOSFETs," IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 546-560, Apr. 1996. (Pubitemid 126770858)