메뉴 건너뛰기




Volumn 53, Issue 6, 2006, Pages 3122-3131

Effects of angle of incidence on proton and neutron-induced single-event latchup

Author keywords

Hardness assurance; Proton radiation effects; Single event effects; Single event latchup

Indexed keywords

ANGLE OF INCIDENCE; PROTON ENERGIES; SINGLE-EVENT EFFECTS; SINGLE-EVENT LATCHUP (SEL);

EID: 33846315975     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.884059     Document Type: Conference Paper
Times cited : (39)

References (26)
  • 1
    • 0018554158 scopus 로고
    • Simulation of cosmic-ray induced soft errors and latchup in integrated-circuit computer memories
    • Dec
    • W. A. Kolasinski, J. B. Blake, J. K. Anthony, W. E. Price, and E. C. Smith, "Simulation of cosmic-ray induced soft errors and latchup in integrated-circuit computer memories," IEEE Trans. Nucl. Sci., vol. 26, no. 6, pp. 5087-5091, Dec. 1979.
    • (1979) IEEE Trans. Nucl. Sci , vol.26 , Issue.6 , pp. 5087-5091
    • Kolasinski, W.A.1    Blake, J.B.2    Anthony, J.K.3    Price, W.E.4    Smith, E.C.5
  • 4
    • 0030127490 scopus 로고    scopus 로고
    • The influence of VLSI technology evolution on radiation-induced latchup in systems
    • Apr
    • A. H. Johnston, "The influence of VLSI technology evolution on radiation-induced latchup in systems," IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 505-521, Apr. 1996.
    • (1996) IEEE Trans. Nucl. Sci , vol.43 , Issue.2 , pp. 505-521
    • Johnston, A.H.1
  • 5
    • 0022866162 scopus 로고
    • Theory of single-event latchup in complementary metal-oxide semiconductor integrated circuits
    • Dec
    • M. Shoga and D. Binder, "Theory of single-event latchup in complementary metal-oxide semiconductor integrated circuits," IEEE Trans. Nucl. Sci., vol. 33, no. 6, pp. 1714-1717, Dec. 1986.
    • (1986) IEEE Trans. Nucl. Sci , vol.33 , Issue.6 , pp. 1714-1717
    • Shoga, M.1    Binder, D.2
  • 6
    • 0023588460 scopus 로고
    • Temperature and epi thickness dependence of the heavy ion induced latchup threshold for a CMOS/EPI 16 K static RAM
    • Dec
    • L. S. Smith, D. K. Nichols, J. R. Coss, W. E. Price, and D. Binder, "Temperature and epi thickness dependence of the heavy ion induced latchup threshold for a CMOS/EPI 16 K static RAM," IEEE Trans. Nucl. Sci., vol. 34, no. 6, pp. 1800-1802, Dec. 1987.
    • (1987) IEEE Trans. Nucl. Sci , vol.34 , Issue.6 , pp. 1800-1802
    • Smith, L.S.1    Nichols, D.K.2    Coss, J.R.3    Price, W.E.4    Binder, D.5
  • 7
    • 0026370425 scopus 로고
    • The effect of temperature on single-particle latchup
    • Dec
    • A. H. Johnston, B. W. Hughlock, M. P. Baze, and R. E. Plaag, "The effect of temperature on single-particle latchup," IEEE Trans. Nucl. Sci., vol. 38, no. 6, pp. 1435-1441, Dec. 1991.
    • (1991) IEEE Trans. Nucl. Sci , vol.38 , Issue.6 , pp. 1435-1441
    • Johnston, A.H.1    Hughlock, B.W.2    Baze, M.P.3    Plaag, R.E.4
  • 10
    • 0031367159 scopus 로고    scopus 로고
    • Charge collection and SEU from angled ion strikes
    • Dec
    • P. E. Dodd, M. R. Shaneyfelt, and F. W. Sexton, "Charge collection and SEU from angled ion strikes," IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 2256-2265, Dec. 1997.
    • (1997) IEEE Trans. Nucl. Sci , vol.44 , Issue.6 , pp. 2256-2265
    • Dodd, P.E.1    Shaneyfelt, M.R.2    Sexton, F.W.3
  • 13
    • 0028727852 scopus 로고
    • On the angular dependence of proton induced events and charge collection
    • Dec
    • J. Levinson, J. Barak, A. Zentner, A. Akkerman, and Y. Lifshitz, "On the angular dependence of proton induced events and charge collection," IEEE Trans. Nucl. Sci., vol. 41, no. 6, pp. 2098-2102, Dec. 1994.
    • (1994) IEEE Trans. Nucl. Sci , vol.41 , Issue.6 , pp. 2098-2102
    • Levinson, J.1    Barak, J.2    Zentner, A.3    Akkerman, A.4    Lifshitz, Y.5
  • 14
    • 0031354388 scopus 로고    scopus 로고
    • Latchup in integrated circuits from energetic protons
    • Dec
    • A. H. Johnston, G. M. Swift, and L. D. Edmonds, "Latchup in integrated circuits from energetic protons," IEEE Trans. Nucl., vol. 44, no. 6, pp. 2367-2377, Dec. 1997.
    • (1997) IEEE Trans. Nucl , vol.44 , Issue.6 , pp. 2367-2377
    • Johnston, A.H.1    Swift, G.M.2    Edmonds, L.D.3
  • 15
    • 0034504425 scopus 로고    scopus 로고
    • Operation of the TRIUMF (20-500 MeV) proton irradiation facility
    • Reno, NV, Jul
    • E. Blackmore, "Operation of the TRIUMF (20-500 MeV) proton irradiation facility," in Proc. IEEE Radiation Effects Data Workshops, Reno, NV, Jul. 2000, pp. 1-5.
    • (2000) Proc. IEEE Radiation Effects Data Workshops , pp. 1-5
    • Blackmore, E.1
  • 17
    • 0025505478 scopus 로고
    • The Los Alamos National Laboratory spallation neutron source
    • P. W. Lisowski, C. D. Bowman, G. J. Russell, and S. A. Wender, "The Los Alamos National Laboratory spallation neutron source," Nucl. Sci. Eng., vol. 106, no. 2, pp. 208-218, 1990.
    • (1990) Nucl. Sci. Eng , vol.106 , Issue.2 , pp. 208-218
    • Lisowski, P.W.1    Bowman, C.D.2    Russell, G.J.3    Wender, S.A.4
  • 18
    • 0036956113 scopus 로고    scopus 로고
    • Latent damage in CMOS devices from single-event latchup
    • Dec
    • H. N. Becker, T. F. Miyahira, and A. H. Johnston, "Latent damage in CMOS devices from single-event latchup," IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 3009-3015, Dec. 2002.
    • (2002) IEEE Trans. Nucl. Sci , vol.49 , Issue.6 , pp. 3009-3015
    • Becker, H.N.1    Miyahira, T.F.2    Johnston, A.H.3
  • 20
    • 0024104046 scopus 로고
    • The space radiation environment for electronics
    • Nov
    • E. G. Stassinopoulos and J. P. Raymond, "The space radiation environment for electronics," Proc. IEEE, vol. 76, no. 11, pp. 1423-1442, Nov. 1988.
    • (1988) Proc. IEEE , vol.76 , Issue.11 , pp. 1423-1442
    • Stassinopoulos, E.G.1    Raymond, J.P.2
  • 21
  • 22
    • 0028705539 scopus 로고
    • Single event upset and charge collection measurements using high energy protons and neutrons
    • Dec
    • E. Normand, D. L. Oberg, J. L. Wert, J. D. Ness, P. P. Majewski, S. Wender, and A. Gavron, "Single event upset and charge collection measurements using high energy protons and neutrons," IEEE Trans. Nucl. Sci., vol. 41, no. 6, pp. 2203-2209, Dec. 1994.
    • (1994) IEEE Trans. Nucl. Sci , vol.41 , Issue.6 , pp. 2203-2209
    • Normand, E.1    Oberg, D.L.2    Wert, J.L.3    Ness, J.D.4    Majewski, P.P.5    Wender, S.6    Gavron, A.7
  • 26


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.