Neutron induced single-event burnout of IGBT

2010 International Power Electronics Conference - ECCE Asia -, IPEC 2010

Volumn , Issue , 2010, Pages 142-148

  Shoji, Tomoyuki ^a   Nishida, Shuichi ^b   Ohnishi, Toyokazu ^b   Fujikawa, Touma ^b   Nose, Noboru ^b   Ishiko, Masayasu ^a   Hamada, Kimimori ^b  

^a Rd Management Section   (Japan)

^b TOYOTA MOTOR CORPORATION   (Japan)

Author keywords

Base push out effect; Parasitic thyristor action; Single event burnout (SEB) of IGBT; White neutron irradiation

Indexed keywords

CATASTROPHIC FAILURES; COLLECTOR VOLTAGE; COSMIC RAY NEUTRON; CURRENT GAINS; DEVICE SIMULATIONS; FAILURE RATE; PARASITIC THYRISTOR ACTION; PARASITIC TRANSISTORS; POWER SEMICONDUCTOR DEVICES; PUSH-OUT; SINGLE-EVENT BURNOUTS; WHITE NEUTRON-IRRADIATION;

ACTIVE FILTERS; BIPOLAR TRANSISTORS; ELECTRIC SWITCHGEAR; IMPACT IONIZATION; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); NEUTRONS; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; THRESHOLD VOLTAGE; THYRISTORS;

NEUTRON IRRADIATION;

EID: 77956527525     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPEC.2010.5543845     Document Type: Conference Paper

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